Transistors

Transistors are semiconductors that generate, control, and amplify electrical signals. It is an essential component of microchips and integrated circuits. Basically, what transistors do is move weak signals from low to high resistance circuits. Some transistors are equipped with three terminals known as the collector, base, and emitter. The left side of a transistor is the collector diode. The thin layers in the middle part are the base diode. The right side is the emitter. There are also transistors with three terminals classified as drain, gate, and source.

History of Transistors

On December 23, 1947, New Jersey-based Bell Laboratories demonstrated the first transistor, which was an invention of Walter Brattain, John Bardeen, and William Shockley. However, the principles and concept of field-effect transistor was already introduced back in 1925 by Julius Edgar Lilienfeld. The Bell Labs transistor was a bipolar point-contact transistor.

In 1948, Shockley came out with an improved version of the transistor; this time it was called the bipolar junction transistor or BJT.

There are two types of transistors: BJT and the field-effect transistor or FET.

BJT or Bipolar Junction Transistor

Bipolar transistors consist of two back-to-back positioned PN diode junctions. They are current devices, so their main objective is to amplify current. BJTs operate using holes and electrons, which explains their name.

Field-Effect Transistor

FETs or field-effect transistors, unlike BJTs, are voltage devices. They are also unipolar and can help amplify weak signals of both digital and analog variety. The two types of field-effect transistors are IGFET or Insulated-Gate Field-Effect Transistor and MOSFET or Metal-Oxide Semiconductor Field-Effect Transistor.

Transistors are found in many devices, including watches, cameras, pacemakers, calculators, and hearing aids.

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NTE378 from Nte Electronics
Nte Electronics

BIPOLAR TRANSISTOR, PNP -80V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; DC Collector Current:10A; Power Dissipation Pd:50W; DC Current Gain hFE:60hFE; No. of Pins:3Pins; Transistor Mounting:Through Hole RoHS Compliant: Yes

UMZ1NFHATR from Rohm
Rohm

TRANS, NPN & PNP, AEC-Q101, 50V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

BCM847DS 115. from Nexperia
Nexperia

Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

SBC847BPDW1T1G. from On Semiconductor
On Semiconductor

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

EMT52T2R from Rohm
Rohm

TRANS, DUAL PNP, -50V, -0.1A, 150DEG C; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-563; No. ofRoHS Compliant: Yes

BC856BDW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:3Pins RoHS Compliant: Yes

BC846BDW1T1G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN, DUAL, 65V, SOT363, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins RoHS Compliant: Yes

BC857BDW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, -45V, 0.1A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:150hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

BCM847BS,115. from Nexperia
Nexperia

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

BC846S,125. from Nexperia
Nexperia

Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:200mW; DC Current Gain hFE:110hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: Yes

SN75469D from Texas Instruments
Texas Instruments

DARLINGTON TRANSISTOR ARRAY, NPN, 7, 100V SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:350mA; Power Dissipation Pd:-; DC Current Gain hFE:-; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

BCV62B,215 from Nexperia
Nexperia

TRANS, DUAL PNP, 30V, 150DEG C, 0.25W; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:-100mA; Power Dissipation Pd:250mW; DC Current Gain hFE:220hFE; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BC847BPN,115 from Nexperia
Nexperia

TRANS, NPN/PNP, 45V, 0.1A, 150DEGC, 0.3W; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Infineon

Bipolar (BJT) Array Transistor, PNP, 30 V, 300 mW, 100 mA, 520, SOT-143 RoHS Compliant: Yes

ULQ2004A from Stmicroelectronics
Stmicroelectronics

DARLINGTON ARRAY, 2004, DIP16; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:500mA; Power Dissipation Pd:-; DC Current Gain hFE:1000hFE; No. of Pins:16Pins; Operating Temperature Max:105┬░CRoHS Compliant: Yes

MBT3946DW1T2G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

MBT3904DW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, BIPOLAR, NPN, DUAL 40V, SOT363, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

MBT3906DW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

MBT3946DW1T1G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88, FULL REEL; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

MC1413PG. from On Semiconductor
On Semiconductor

DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50V, DIP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:500mA; Power Dissipation Pd:-; DC Current Gain hFE:1000hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

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