IGBT Single Transistors

Parts from IGBT Single Transistors Category

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MGB15N40CLT4 from On Semiconductor
On Semiconductor

SINGLE IGBT, 420V, 15A, FULL REEL; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:420V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: No

GA100XCP12-227 from Genesic Semiconductor
Genesic Semiconductor

IGBT SIC DIODE COPACK, 1200V, 100A, SOT227; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

RGPR10BM40FHTL from Rohm

IGNITION IGBT 430V 20A TO-252 AEC-Q101; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(br)ceo:460V; Transistor Case Style:TO-252; No. of Pins:3Pins;RoHS Compliant: Yes

RGPR20NS43HRTL from Rohm

IGNITION IGBT 430V 20A TO-263S AEC-Q101; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(br)ceo:460V; Transistor Case Style:TO-263; No. of RoHS Compliant: Yes

RGPR30BM40HRTL from Rohm

IGNITION IGBT 430V 30A TO-252 AEC-Q101; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:430V; Transistor Case Style:TO-252; No. of Pins:3Pins;RoHS Compliant: Yes

RGPR30NS40HRTL from Rohm

IGNITION IGBT 430V 30A TO-263S AEC-Q101; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:430V; Transistor Case Style:TO-263; No. of RoHS Compliant: Yes

RGPZ10BM40FHTL from Rohm

IGNITION IGBT 430V 20A TO-252 AEC-Q101; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(br)ceo:460V; Transistor Case Style:TO-252; No. of Pins:3Pins;RoHS Compliant: Yes

RGS00TS65EHRC11 from Rohm

FIELD STOP TRENCH IGBT 650V 50A TO-247N; DC Collector Current:88A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of RoHS Compliant: Yes

RGS60TS65DHRC11 from Rohm

FIELDSTOP TRENCH IGBT650V30APD223WTO247N; DC Collector Current:56A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of RoHS Compliant: Yes

RGS80TS65DHRC11 from Rohm

FIELDSTOP TRENCH IGBT650V40APD272WTO247N; DC Collector Current:73A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:272W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of RoHS Compliant: Yes

TIG065E8-TL-H. from On Semiconductor
On Semiconductor

DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):4.2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:400V; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 1 - UnlimitedRoHS Compliant: Yes

IKZ50N65ES5XKSA1 from Infineon
Infineon

TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of RoHS Compliant: Yes

IKZ75N65ES5XKSA1 from Infineon
Infineon

TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.42V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of RoHS Compliant: Yes

GT50J325 from Toshiba
Toshiba

IGBT, 600V, TO-3P(LH); DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:240W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

IXDR30N120 from Ixys Semiconductor
Ixys Semiconductor

IGBT TRANSISTOR; 1.2KV, 50A; ISOPLUS-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

IXDR30N120D1 from Ixys Semiconductor
Ixys Semiconductor

IGBT W/ DIODE; 1.2KV, 50A; ISOPLUS-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

IXGF32N170 from Ixys Semiconductor
Ixys Semiconductor

IGBT, ISOI4-PAC; DC Collector Current:44A; Collector Emitter Saturation Voltage Vce(on):3.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

IXGR40N60C2 from Ixys Semiconductor
Ixys Semiconductor

IGBT, ISOPLUS247; DC Collector Current:56A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

SGW30N60FKSA1 from Infineon
Infineon

IGBT, FAST; DC Collector Current:41A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes

STGE200NB60S from Stmicroelectronics
Stmicroelectronics

IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 RoHS Compliant: Yes

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