Bipolar Transistors

Also known as bipolar junction transistors, bipolar transistors are discrete semiconductor devices that amplify alternating current and direct current signals. They are solid-state and three-ended components, and made out of three layers of silicon. As such, bipolar transistors have a base, collector, and emitter.

Bipolar transistors have been around for years. Transistors are considered one of the first functional transistor devices introduced to the public. The earliest version came out in 1947 after a demonstration at Bell Laboratories. The transistor inventors are postwar engineers and physicists Walter Brattain, John Bardeen, and William Shockley. From then on, bipolar transistors increased in popularity and use. In 1956, the enterprising and innovative trio were recognized with a Nobel Prize for the mass production of bipolar transistors.

They are used in different systems, products, and electronic and electrical applications. Anything that needs electronic circuits to function is reliant on bipolar transistors. Some examples include mobile phone amplifiers, microwave power amplifiers, high speed logic circuits, and power-switching apps.

Types

The two types of bipolar junction transistors based on junction type are: PNP (positive-negative-positive) and NPN (negative-positive-negative) transistors.

  • PNP transistors are positive-negative-positive transistors that consist of two layers of P-type material. An N-type semiconductor layer is found between the two P-type layers.
  • NPN transistors are also known as negative-positive-negative transistors. These transistors have two N-type material layers and in between these is a P-type material layer.

Current Flow

Current flows through bipolar amplifiers in three ways:

  1. Saturation or On mode – bipolar transistors function as short circuits between the emitter and collector
  2. Cutoff or Off mode – bipolar transistors act as open or broken circuits and there is no collector current
  3. Active mode – bipolar transistors function as amplifiers

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Parts from Bipolar Transistors Category

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NTE378 from Nte Electronics
Nte Electronics

BIPOLAR TRANSISTOR, PNP -80V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; DC Collector Current:10A; Power Dissipation Pd:50W; DC Current Gain hFE:60hFE; No. of Pins:3Pins; Transistor Mounting:Through Hole RoHS Compliant: Yes

UMZ1NFHATR from Rohm
Rohm

TRANS, NPN & PNP, AEC-Q101, 50V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

BCM847DS 115. from Nexperia
Nexperia

Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

SBC847BPDW1T1G. from On Semiconductor
On Semiconductor

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

EMT52T2R from Rohm
Rohm

TRANS, DUAL PNP, -50V, -0.1A, 150DEG C; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-563; No. ofRoHS Compliant: Yes

BC856BDW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:3Pins RoHS Compliant: Yes

BC846BDW1T1G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN, DUAL, 65V, SOT363, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins RoHS Compliant: Yes

BC857BDW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, -45V, 0.1A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:150hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

BCM847BS,115. from Nexperia
Nexperia

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

BC846S,125. from Nexperia
Nexperia

Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:200mW; DC Current Gain hFE:110hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: Yes

SN75469D from Texas Instruments
Texas Instruments

DARLINGTON TRANSISTOR ARRAY, NPN, 7, 100V SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:350mA; Power Dissipation Pd:-; DC Current Gain hFE:-; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

BCV62B,215 from Nexperia
Nexperia

TRANS, DUAL PNP, 30V, 150DEG C, 0.25W; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:-100mA; Power Dissipation Pd:250mW; DC Current Gain hFE:220hFE; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BC847BPN,115 from Nexperia
Nexperia

TRANS, NPN/PNP, 45V, 0.1A, 150DEGC, 0.3W; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Infineon

Bipolar (BJT) Array Transistor, PNP, 30 V, 300 mW, 100 mA, 520, SOT-143 RoHS Compliant: Yes

ULQ2004A from Stmicroelectronics
Stmicroelectronics

DARLINGTON ARRAY, 2004, DIP16; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:500mA; Power Dissipation Pd:-; DC Current Gain hFE:1000hFE; No. of Pins:16Pins; Operating Temperature Max:105°CRoHS Compliant: Yes

MBT3946DW1T2G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

MBT3904DW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, BIPOLAR, NPN, DUAL 40V, SOT363, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

MBT3906DW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

MBT3946DW1T1G. from On Semiconductor
On Semiconductor

BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88, FULL REEL; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

MC1413PG. from On Semiconductor
On Semiconductor

DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50V, DIP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:500mA; Power Dissipation Pd:-; DC Current Gain hFE:1000hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

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