Bipolar Transistors
Also known as bipolar junction transistors, bipolar transistors are discrete semiconductor devices that amplify alternating current and direct current signals. They are solid-state and three-ended components, and made out of three layers of silicon. As such, bipolar transistors have a base, collector, and emitter.
Bipolar transistors have been around for years. Transistors are considered one of the first functional transistor devices introduced to the public. The earliest version came out in 1947 after a demonstration at Bell Laboratories. The transistor inventors are postwar engineers and physicists Walter Brattain, John Bardeen, and William Shockley. From then on, bipolar transistors increased in popularity and use. In 1956, the enterprising and innovative trio were recognized with a Nobel Prize for the mass production of bipolar transistors.
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They are used in different systems, products, and electronic and electrical applications. Anything that needs electronic circuits to function is reliant on bipolar transistors. Some examples include mobile phone amplifiers, microwave power amplifiers, high speed logic circuits, and power-switching apps.
Types
The two types of bipolar junction transistors based on junction type are: PNP (positive-negative-positive) and NPN (negative-positive-negative) transistors.
- PNP transistors are positive-negative-positive transistors that consist of two layers of P-type material. An N-type semiconductor layer is found between the two P-type layers.
- NPN transistors are also known as negative-positive-negative transistors. These transistors have two N-type material layers and in between these is a P-type material layer.
Current Flow
Current flows through bipolar amplifiers in three ways:
- Saturation or On mode – bipolar transistors function as short circuits between the emitter and collector
- Cutoff or Off mode – bipolar transistors act as open or broken circuits and there is no collector current
- Active mode – bipolar transistors function as amplifiers
Category Selection
View Parts from CategorySingle Bipolar Junction Transistors - BJT
3654 parts
Bipolar Junction Transistor Arrays - BJT
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Pre-Biased / Digital Bipolar Transistors
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Parts from Bipolar Transistors Category
TRANS, NPN & PNP, AEC-Q101, 50V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes
TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:3Pins RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, DUAL, 65V, SOT363, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins RoHS Compliant: Yes
TRANSISTOR, PNP, -45V, 0.1A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:150hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:200mW; DC Current Gain hFE:110hFE; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: Yes
TRANS, DUAL PNP, 30V, 150DEG C, 0.25W; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:-100mA; Power Dissipation Pd:250mW; DC Current Gain hFE:220hFE; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
TRANS, NPN/PNP, 45V, 0.1A, 150DEGC, 0.3W; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
Bipolar (BJT) Array Transistor, PNP, 30 V, 300 mW, 100 mA, 520, SOT-143 RoHS Compliant: Yes
DARLINGTON ARRAY, 2004, DIP16; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:500mA; Power Dissipation Pd:-; DC Current Gain hFE:1000hFE; No. of Pins:16Pins; Operating Temperature Max:105°CRoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR, BIPOLAR, NPN, DUAL 40V, SOT363, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes
TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88, FULL REEL; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes
