Transistor Polarity | PNP |
---|---|
Collector Emitter Voltage V(br)ceo | 30V |
Power Dissipation Pd | 300mW |
DC Collector Current | 100mA |
DC Current Gain hFE | 520hFE |
Transistor Case Style | SOT-143 |
No. of Pins | 4Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | AEC-Q101 |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (27-Jun-2018) |
Collector Emitter Saturation Voltage Vce(on) | 650mV |
Continuous Collector Current Ic Max | 100mA |
Current Ic @ Vce Sat | 100mA |
Current Ic Continuous a Max | 100mA |
Current Ic hFE | 2mA |
External Depth | 2.6mm |
External Length / Height | 1mm |
External Width | 2.9mm |
Gain Bandwidth ft Typ | 250MHz |
Hfe Min | 125 |
Module Configuration | Dual |
No. of Transistors | 2 |
Pin Configuration | b |
Power Dissipation Ptot Max | 300mW |
SMD Marking | 3Ls |
Transition Frequency ft | 250MHz |
Voltage Vcbo | 30V |
Bipolar (Bjt) Array Transistor, Pnp, 30 V, 300 Mw, 100 Ma, 520, Sot-143 Rohs Compliant: Yes |Infineon BCV62CE6327HTSA1 | Newark Electronics |
TRANSISTOR, DUAL, PNP, SOT-143 | element14 |
BCV62 Series PNP 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4 | Future Electronics |
Infineon Darlington Transistor, PNP, 30V, TO-253-4 | Distrelec |
Transistor GP BJT PNP 30V 100mA 4-Pin SOT-143 T/R | Avnet America |
Where can I find additional details, specifications and documents for a BCV62CE6327HTSA1?
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