MBT3906DW1T1G Part Information

Details for MBT3906DW1T1G by ON Semiconductor

Semiconductors - Discretes > Transistors > Bipolar Transistors > Bipolar Junction Transistor Arrays - BJT

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Part Specifications

Transistor Polarity PNP
Collector Emitter Voltage V(br)ceo -40V
DC Collector Current -200mA
Power Dissipation Pd 150mW
DC Current Gain hFE 60hFE
No. of Pins 6Pins
Transistor Mounting Surface Mount
RoHS Compliant Yes
RoHS Compliant

Alternative Part Descriptions

  • BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:60hFE; No. of Pins:6Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes | Newark Electronics

Frequently Asked Questions

Where can I find additional details, specifications and documents for a MBT3906DW1T1G?

Additional datasheets, footprints and schematics for MBT3906DW1T1G are listed in our Part Details tab. You can also find the MBT3906DW1T1G image and similar parts on this details page.

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What category does MBT3906DW1T1G fall under?

The MBT3906DW1T1G is listed under Semiconductors - Discretes > Transistors > Bipolar Transistors > Bipolar Junction Transistor Arrays - BJT.

Can I view similar or alternative parts?

You can view similar parts to MBT3906DW1T1G when available in the Bipolar Junction Transistor Arrays - BJT range under the specifications section at the bottom of the details page.

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Is the MBT3906DW1T1G RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Newark.

Which authorised distributors for MBT3906DW1T1G have stock available?

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