Nonvolatile SRAM - NVSRAM

Parts from Nonvolatile SRAM - NVSRAM Category

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CY14B101NA-ZS45XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 64K X 16BIT, 45NS, TSOP-II-44; Memory Size:1Mbit; Memory Organisation:64K x 16bit; Read Access Time:45ns; Write Access Time:45ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of RoHS Compliant: Yes

CY14B104LA-ZS25XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 512K X 8BIT, 25NS, TSOP-II-44; Memory Size:4Mbit; Memory Organisation:512K x 8bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of RoHS Compliant: Yes

CY14B256LA-SZ25XIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 32K X 8BIT, 25NS, SOIC-32; Memory Size:256Kbit; Memory Organisation:32K x 8bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:32Pins; IC RoHS Compliant: Yes

CY14B104NA-BA45XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 256K X 16BIT, 45NS, FBGA-48; Memory Size:4Mbit; Memory Organisation:256K x 16bit; Read Access Time:45ns; Write Access Time:45ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; RoHS Compliant: Yes

CY14B108N-BA25XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 512K X 16BIT, 25NS, FBGA-48; Memory Size:8Mbit; Memory Organisation:512K x 16bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; RoHS Compliant: Yes

CY14B108N-ZSP25XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NV SRAM, 512K X 16BIT, 25NS, TSOP-II-54; Memory Size:8Mbit; Memory Organisation:512K x 16bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of RoHS Compliant: Yes

DS1225AB-70IND+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 64KBIT, EDIP-28; Memory Size:64Kbit; Memory Organisation:8K x 8bit; Read Access Time:70ns; Write Access Time:70ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of Pins:28Pins RoHS Compliant: Yes

DS1225AD-150IND+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 64KBIT, EDIP-28; Memory Size:64Kbit; Memory Organisation:8K x 8bit; Read Access Time:150ns; Write Access Time:150ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of Pins:28Pins RoHS Compliant: Yes

DS1225AD-70+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 64KBIT, EDIP-28; Memory Size:64Kbit; Memory Organisation:8K x 8bit; Read Access Time:70ns; Write Access Time:70ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of Pins:28Pins RoHS Compliant: Yes

Maxim Integrated Products

NV SRAM, PARALLEL, 16MBIT, EDIP-36; Memory Size:16Mbit; Memory Organisation:2M x 8bit; Read Access Time:70ns; Write Access Time:70ns; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:EDIP; No. of Pins:36Pins RoHS Compliant: Yes

CY14B101Q2-LHXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TRAY / NON VOLATILE SRAMS ROHS COMPLIANT: YES

DS1225AB-200IND+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 64KBIT, EDIP-28; Memory Size:64Kbit; Memory Organisation:8K x 8bit; Read Access Time:200ns; Write Access Time:200ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of Pins:28Pins; RoHS Compliant: Yes

DS1230AB-120IND+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 256KBIT, EDIP-28; Memory Size:256Kbit; Memory Organisation:32K x 8bit; Read Access Time:120ns; Write Access Time:120ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of RoHS Compliant: Yes

DS1245AB-70IND+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 1MBIT, EDIP-32; Memory Size:1Mbit; Memory Organisation:128K x 8bit; Read Access Time:70ns; Write Access Time:70ns; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:EDIP; No. of Pins:32Pins; IC RoHS Compliant: Yes

DS1330YP-70+ from Maxim Integrated Products
Maxim Integrated Products

NV SRAM, PARALLEL, 256KBIT, PWRCP-34; Memory Size:256Kbit; Memory Organisation:32K x 8bit; Read Access Time:70ns; Write Access Time:70ns; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:PWRCP; No. of Pins:34Pins; RoHS Compliant: Yes

DS1270Y-70# from Maxim Integrated Products
Maxim Integrated Products

NVSRAM, 16MBIT, 0 TO 70DEG C ROHS COMPLIANT: YES

Stmicroelectronics

NVSRAM, 64KBIT, 0 TO 70DEG C ROHS COMPLIANT: YES

CY14B101Q2A-SXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / NON VOLATILE SRAMS ROHS COMPLIANT: YES

CY14B108N-ZSP45XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NVSRAM, 8MBIT, -40 TO 85DEG C; Memory Size:8Mbit; Memory Organisation:512K x 16bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of Pins:54Pins; IC RoHS Compliant: Yes

CY14B256LA-SP45XI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

NVSRAM, 256KBIT, -40 TO 85DEG C; Memory Size:256Kbit; Memory Organisation:32K x 8bit; Read Access Time:45ns; Write Access Time:45ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:SSOP; No. of Pins:48Pins; IC RoHS Compliant: Yes

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