LM5110-3M/NOPB Semiconductors - ICs by Texas Instruments

COMPOUND GATE DRIVER LOW SIDE SOIC-8

Status: Unknown
Series: -
RoHS: Unknown
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The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermallyenhanced WSON-10 packages.
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19,755
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Specifications

Driver Configuration Low Side
Peak Output Current 5A
Supply Voltage Min 3.5V
Supply Voltage Max 14V
Driver Case Style SOIC
No. of Pins 8Pins
Input Delay 25ns
Output Delay 25ns
Operating Temperature Min -40°C
Operating Temperature Max 125°C
Product Range -
Automotive Qualification Standard -
RoHS Phthalates Compliant Yes
MSL MSL 1 - Unlimited
SVHC No SVHC (27-Jun-2018)

Alternative Descriptions

5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input | Texas Instruments
IC: driver | Transfer Multisort Elektronik
Compound Gate Driver, Low Side, Soic-8 | Newark Electronics

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The LM5110-3M/NOPB is listed under Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs.

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This part has not been flagged as RoHS Compliant.

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