LM5110-3M/NOPB Part Information

Details for LM5110-3M/NOPB by Texas Instruments

Electronic & Electrical Components>Semiconductors - ICs>Driver & Interface ICs

Part Description

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermallyenhanced WSON-10 packages.

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Part Features

  • 5A sink/3A Source Current Capability
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Independent Inputs (TTL Compatible)
  • Independently Drives Two N-Channel MOSFETs
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Packages:
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Two Channels can be Connected in Parallel to Double the Drive Current

Part Specifications

Driver Configuration Low Side
Peak Output Current 5A
Supply Voltage Min 3.5V
Supply Voltage Max 14V
Driver Case Style SOIC
No. of Pins 8Pins
Input Delay 25ns
Output Delay 25ns
Operating Temperature Min -40°C
Operating Temperature Max 125°C
Product Range -
Automotive Qualification Standard -
RoHS Phthalates Compliant Yes
MSL MSL 1 - Unlimited
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • COMPOUND GATE DRIVER, LOW SIDE, SOIC-8; Driver Configuration:Low Side; Peak Output Current:5A; Supply Voltage Min:3.5V; Supply Voltage Max:14V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:25ns; Output Delay:25ns; OperatingRoHS Compliant: Yes | Newark Electronics
  • 5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input | Texas Instruments
  • [Texas Instruments] LM5110-3M/NOPB | Distrelec

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What category does LM5110-3M/NOPB fall under?

The LM5110-3M/NOPB is listed under Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs.

Can I view similar or alternative parts?

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Is the LM5110-3M/NOPB RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Farnell.

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Authorised distributors including Newark Electronics, Texas Instruments and Distrelec have stock available or on a lead time for LM5110-3M/NOPB.

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