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Details for LM9061M/NOPB by Texas Instruments
Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs
LM9061M/NOPB
Buy Directly from Texas Instruments (5580 in stock) $1.1600
DRIVER MOSFET HIGH SIDE SOIC-8
LM9061M/NOPB image

LM9061M/NOPB by Texas Instruments

DRIVER MOSFET HIGH SIDE SOIC-8
Features
AEC-Q100 Qualified With the Following Results: u2013 Device HBM ESD Classification Level 2 u2013 Device CDM ESD Classification Level C4B
CMOS Logic-Compatible ON and OFF Control
Gradual Turnoff to Minimize Inductive Load Transient Voltages
Lossless Overcurrent Protection Latch-OFF u2013 Current Sense Resistor is Not Required u2013 Minimizes Power Loss With High Current Loads
Overvoltage Shut-OFF With VCC > 30 V
Programmable Delay of Protection Latch-OFF
Qualified for Automotive Applications
Withstands 60-V Supply Transients
Part Information
LM9061M/NOPB image
RoHS Compliant
Description
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET. Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
Specifications
Driver Configuration:
High Side
Peak Output Current:
145µA
Supply Voltage Min:
7V
Supply Voltage Max:
26V
Driver Case Style:
SOIC
No. of Pins:
8Pins
Input Delay:
1.5ms
Output Delay:
10ms
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualification Standard:
-
RoHS Phthalates Compliant:
Yes
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (27-Jun-2018)
Device Type:
MOSFET Driver
Module Configuration:
High Side
Alternate Descriptions
MOSFET DRIVER, SOIC-8; Driver Configuration:High Side; Peak Output Current:145µA; Supply Voltage Min:7V; Supply Voltage Max:26V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:1.5ms; Output Delay:10ms; Product Range:- RoHS Compliant: Yes Newark Electronics
MOSFET DRVR 1.35V 1-OUT Hi Side Non-Inv 8-Pin SOIC N Rail Avnet America
MOSFET DRVR 1.35V 1-OUT Hi Side Non-Inv 8-Pin SOIC N Rail Avnet Europe
7-V to 26-V high side protection controller Texas Instruments