SI7113DN-T1-GE3 Part Information
|Transistor Polarity||P Channel|
|Continuous Drain Current Id||-13.2A|
|Drain Source Voltage Vds||-100V|
|On Resistance Rds(on)||0.119ohm|
|Rds(on) Test Voltage Vgs||-4.5V|
|Threshold Voltage Vgs||-1V|
|Power Dissipation Pd||52W|
|Transistor Case Style||PowerPAK 1212|
|No. of Pins||8Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (15-Jun-2015)|
|Operating Temperature Min||-50°C|
Alternative Part Descriptions
- MOSFET, P-CH, 100V, 13.2A, 150DEG C, 52W; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; On Resistance Rds(on):0.119ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
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The SI7113DN-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the SI7113DN-T1-GE3 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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