SI2301CDS-T1-E3 Part Information

Details for SI2301CDS-T1-E3 by Vishay Intertechnology

Semiconductors - Discretes > Transistors > MOSFET Transistors > Single MOSFET Transistors

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Part Specifications

Transistor Polarity P Channel
Continuous Drain Current Id -3.1A
Drain Source Voltage Vds -20V
On Resistance Rds(on) 0.11ohm
Rds(on) Test Voltage Vgs -2.5V
Threshold Voltage Vgs -400mV
Power Dissipation Pd 1.6W
Transistor Case Style SOT-23
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
SVHC No SVHC (15-Jun-2015)
Operating Temperature Min -55°C
RoHS Compliant

Alternative Part Descriptions

  • MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes | Newark Electronics

Frequently Asked Questions

Where can I find additional details, specifications and documents for a SI2301CDS-T1-E3?

Additional datasheets, footprints and schematics for SI2301CDS-T1-E3 are listed in our Part Details tab. You can also find the SI2301CDS-T1-E3 image and similar parts on this details page.

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What category does SI2301CDS-T1-E3 fall under?

The SI2301CDS-T1-E3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the SI2301CDS-T1-E3 RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Farnell.

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Authorised distributors including Newark Electronics have stock available or on a lead time for SI2301CDS-T1-E3.

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