UMH11NTN

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Series Information for UMH11NTN - Rohm

Features

  • feature
    1) Built-In Biasing Resistors, R1 = R2 = 10kuf057. 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing uf06cInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant.

Description

TRANSISTOR DUAL UM6 NPN/NPN

Specifications

Digital Transistor Polarity:
Dual NPN
Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
10kohm
Base-Emitter Resistor R2:
10kohm
Resistor Ratio R1 / R2:
-
RF Transistor Case:
SOT-363
No. of Pins:
6Pins
Product Range:
UMH11N Series
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Current Ic Continuous a Max:
100mA
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Gain Bandwidth ft Typ:
250MHz
Hfe Min:
30
Module Configuration:
Dual
Operating Temperature Max:
150°C
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Power Dissipation Pd:
150mW
Transistor Case Style:
SOT-363
Transistor Polarity:
NPN
Transistor Type:
General Purpose
Transition Frequency ft:
250MHz

Alternate Descriptions

Avnet America
Trans Digital BJT NPN 100mA 6-Pin UMT T/R
Avnet Europe
Trans Digital BJT NPN 100mA 6-Pin UMT T/R
Avnet Asia
Trans Digital BJT NPN 100mA 6-Pin UMT T/R
Conrad
Collector current: 100 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 300 mV; DC current gain (hFE): 30; DC current gain hFE - reference current: 5 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): UMT6; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 2; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 150 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays, bias voltage; Transit frequency f(T): 250 MHz; Type (manufacturer type): UMH11NTN; Type (transistors): NPN - biased
Future Electronics
UMH11N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88