SST2222AT116

Semiconductors - Discretes

> Transistors

> Bipolar Transistors

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Series Information for SST2222AT116 - Rohm

Features

  • feature
    1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A/ SST2907A / MMST2907A. zPackage, marking, and packaging specifications Part No. UMT2222A UMT3 R1P T106 3000 SST2222A SST3 R1P T116 3000 MMST2222A SMT3 R1P T146 3000 Packaging type Marking Code Basic ordering unit (pieces) zAbsolute maximum ratings (Ta = 25u00b0C) Parameter Symbol VCBO VCEO VEBO IC Tj Tstg Limits 75 40 6 0.6 0.35 150 u221255 to +150 Unit V V V A W W PC 0.2 SST2222A UMT2222A,SST2222A, MMST2222A u00b0C u00b0C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature u2217 u2217 When mounted on a 7 x 5 x 0.6 mm ceramic board

Description

TRANSISTOR SOT-23 NPN

Specifications

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
200mW
DC Collector Current:
150mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
300mV
Current Ic Continuous a Max:
150mA
Gain Bandwidth ft Typ:
300MHz
Hfe Min:
100
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Termination Type:
Surface Mount Device
Transistor Type:
Power Bipolar

Alternate Descriptions

Avnet America

Trans GP BJT NPN 40V 0.6A 3-Pin SST T/R

Avnet America product

Avnet Europe

Trans GP BJT NPN 40V 0.6A 3-Pin SST T/R

Avnet Europe product

Avnet Asia

Trans GP BJT NPN 40V 0.6A 3-Pin SST T/R

Avnet Asia product

Future Electronics

SST2222A Series 40 V 0.2 W 0.6 A SMT NPN Medium Power Transistor - SST-3