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Details for SCH2080KEC by Rohm
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
MOSFET 1200V 40A SIC TO-247
SCH2080KEC image

SCH2080KEC by Rohm

MOSFET 1200V 40A SIC TO-247
Features
262W 1) Low on-resistance Gate - Source voltage (DC) Parameter Tc = 25u00b0C Drain - Source voltage Tc = 100u00b0C Continuous drain current Pulsed drain current 7) Pb-free lead plating ; RoHS compliant lAbsolute maximum ratings (Ta = 25u00b0C) u30fbMotor drives
Part Information
SCH2080KEC image
RoHS Compliant
Specifications
Transistor Polarity:
N Channel
Continuous Drain Current Id:
35A
Drain Source Voltage Vds:
1.2kV
On Resistance Rds(on):
0.08ohm
Rds(on) Test Voltage Vgs:
18V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
179W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Operating Temperature Min:
-55°C
Alternate Descriptions
SiC MOSFET,N-channel,1200V,40A,TO247 RS Components
MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:35A; On Resistance Rds(on):0.08ohm; Transistor Mounting:Through Hole; Threshold Voltage Vgs:4V RoHS Compliant: Yes Newark Electronics
Trans SiC MOSFET N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Tube Avnet America
Trans SiC MOSFET N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Tube Avnet Europe
SCH2080KEC Series N-Channel 1200 V 117 mOhm 106 nC SIC Power Mosfet - TO-247 Future Electronics