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Details for PD57006-E by STMicroelectronics
Semiconductors - Discretes > Transistors > MOSFET Transistors
MOSFET RF 6W 945MHZ
PD57006-E image

PD57006-E by STMicroelectronics

MOSFET RF 6W 945MHZ
Part Information
PD57006-E image
RoHS Compliant
Specifications
Drain Source Voltage Vds:
65V
Continuous Drain Current Id:
1A
Power Dissipation Pd:
20W
Operating Frequency Min:
925MHz
Operating Frequency Max:
960MHz
RF Transistor Case:
SOIC
No. of Pins:
3Pins
Operating Temperature Max:
165°C
Product Range:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)
Current Id Max:
1A
Full Power Rating Temperature:
70°C
Termination Type:
Surface Mount Device
Threshold Voltage Vgs:
5V
Transistor Case Style:
PowerPAK SO
Transistor Polarity:
N Channel
Transistor Type:
RF MOSFET
Voltage Vds Typ:
28V
Voltage Vgs Max:
20V
Alternate Descriptions
RF FET Transistor, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC RoHS Compliant: Yes Newark Electronics
RF POWER TRANSISTOR Richardson RFPD