IMT1AT110

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Series Information for IMT1AT110 - Rohm

Features

  • feature
    1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

Description

TRANSISTOR DUAL SC-74 PNP/PNP

Specifications

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
300mW
DC Collector Current:
-150mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
500mV
Current Ic Continuous a Max:
50mA
Gain Bandwidth ft Typ:
140MHz
Hfe Min:
120
Module Configuration:
Dual
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Transistor Type:
General Purpose
Transition Frequency ft:
140MHz

Alternate Descriptions

Avnet America

Trans GP BJT PNP 50V 0.15A 6-Pin SMT T/R

Avnet America product

Avnet Europe

Trans GP BJT PNP 50V 0.15A 6-Pin SMT T/R

Avnet Europe product

Avnet Asia

Trans GP BJT PNP 50V 0.15A 6-Pin SMT T/R

Avnet Asia product

Conrad

Collector current: -150 mA; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -50 V; Collector-emitter saturation voltage (max.): -500 mV; DC current gain (hFE): 120; DC current gain hFE - reference current: -1 mA; DC current gain hFE - reference voltage: -6 V; Enclosure type (semiconductors): SMT6; Manufacturer: ROHM Semiconductor; Manufacturer code (components): ROH; Mounting type: Surface-mount; No. of channels: 2; Packaging type (components): Tape cut, re-reeling option; Power (max) P(TOT): 300 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays; Transit frequency f(T): 140 MHz; Type (manufacturer type): IMT1AT110; Type (transistors): PNP

Conrad product

Future Electronics

IMT1A Series -50 V -150 mA Dual PNP General Purpose Transistor - SMT-6