2N7002 by Microchip Technology

60V, 7.5 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain


BVdss min (V) 60
Rds (on) max (Ohms) 7.5
CISSmax (pF) 50
Vgs(th) max (V) 2.5
Package SOT-23

2N7002 MOSFETs by ON Semiconductor

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.115A, 7.5Ω

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and Reliable.
High saturation current capability.
This product is general usage and suitable for many different applications.
Power MOSFET Gate Drivers
End Products
Small Servo Motor Control


Description 2N7002
Compliance Pb-free Halide free
Channel Polarity N-Channel
Configuration Single
V(BR)DSS Min (V) 60
VGS Max (V) ±20
VGS(th) Max (V) 2.5
ID Max (A) 0.115
PD Max (W) 0.2
RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) 7500
RDS(on) Max @ VGS = 10 V (mΩ) 7500
Qg Typ @ VGS = 4.5 V (nC) -
Qg Typ @ VGS = 10 V (nC) 1
Ciss Typ (pF) 20
Package Type SOT-23-3

Alternative Descriptions

MOSFET, N, 60V, SOT-23 | element14
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23 | Future Electronics
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Avnet America
Mosfet N Channel, 60V, 115Ma, Sot-23, Full Reel | Newark Electronics
MOSFET N-Channel 60V 0.115A SOT23 | RS

2N7002 MOSFETs by Nexperia

2N7002 - 60 V, 300 mA N-channel Trench MOSFET

Status: Released for supply
Series: -
RoHS: Unknown
Download Datasheet Visit Manufacturer Site View Pricing & Stock

No additional details available for this product.

2N7002 MOSFET Master Table by Diodes Incorporated


This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.


Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part.
A listing can be found at https://www.diodes.com/products/automotive/
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate Datasheet (2N7002Q)
Motor Control
Power Management Functions


AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.21 A
PD @TA = +25°C (W) 0.37 W
RDS(ON)Max @ VGS(10V)(mΩ) 5000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 7500 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.223 nC
CISS Typ (pF) 22 @ 25V pF

2N7002 Semiconductors - Discretes by STMicroelectronics

MOSFET N 0.2A 60V SOT-23

Status: Unknown
Series: -
RoHS: Unknown
Download Datasheet Visit Manufacturer Site View Pricing & Stock


Transistor Polarity N Channel
Continuous Drain Current Id 180mA
Drain Source Voltage Vds 60V
On Resistance Rds(on) 1.8ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2.1V
Power Dissipation Pd 360mW
Transistor Case Style SOT-23
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (17-Dec-2015)
Current Id Max 200mA
Current Temperature 25°C
Device Marking ST2N
External Depth 2.5mm
External Length / Height 1.12mm
External Width 3.05mm
Full Power Rating Temperature 25°C
No. of Transistors 1
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Pulse Current Idm 800mA
SMD Marking 72
Tape Width 8mm
Voltage Vds Typ 60V
Voltage Vgs Max 18V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 3V

2N7002 Semiconductors - Discretes by NTE Electronics

Mosfet N-channel Enhancement Mode Bvdss=60V SOC-23 Case

Status: Unknown
Series: -
RoHS: Unknown
Download Datasheet Visit Manufacturer Site View Pricing & Stock

No additional details available for this product.

2N7002 Transistors by Vishay Intertechnology


Status: Unknown
Series: -
RoHS: Unknown
Download Datasheet Visit Manufacturer Site View Pricing & Stock


Transistor Polarity N Channel
Drain Source Voltage Vds 60V
Continuous Drain Current Id 115mA
On Resistance Rds(on) 7.5ohm
Transistor Mounting Surface Mount
Rds(on) Test Voltage Vgs 10V
RoHS Compliant No

Frequently Asked Questions

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Is the 2N7002 RoHS compliant?

This part has not been flagged as RoHS Compliant.

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