ISO5851QDWRQ1 Part Information

Details for ISO5851QDWRQ1 by Texas Instruments

Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs

Part Description

The ISO5851-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

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Part Specifications

Driver Configuration Inverting Non Inverting
Peak Output Current 5A
Supply Voltage Min 3V
Supply Voltage Max 5.5V
Driver Case Style SOIC
No. of Pins 16Pins
Input Delay -
Output Delay -
Operating Temperature Min -40°C
Operating Temperature Max 125°C
Product Range -
Automotive Qualification Standard AEC-Q100
RoHS Phthalates Compliant Yes
MSL MSL 2 - 1 year
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • Automotive 2.5-A / 5-A, 5.7-kV RMS single channel isolated gate driver with protection features | Texas Instruments

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