25 V, 0.22 A continuous, 0.65 A Peak. |
RDS(ON) = 4 Ω @ VGS= 4.5 V, |
RDS(ON) = 5 Ω @ VGS= 2.7 V. |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). |
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). |
Compact industry standard SC70-6 surface mount package. |
Applications |
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This product is general usage and suitable for many different applications. |
Description | FDG6301N |
---|---|
Compliance | Pb-free Halide free |
Channel Polarity | N-Channel |
Configuration | Dual |
V(BR)DSS Min (V) | 25 |
VGS Max (V) | 8 |
VGS(th) Max (V) | 1.5 |
ID Max (A) | 0.22 |
PD Max (W) | 0.3 |
RDS(on) Max @ VGS = 2.5 V (mΩ) | Q1=Q2=5000 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | Q1=Q2=4000 |
RDS(on) Max @ VGS = 10 V (mΩ) | - |
Qg Typ @ VGS = 4.5 V (nC) | 0.29 1.64 |
Qg Typ @ VGS = 10 V (nC) | 0.29 |
Ciss Typ (pF) | 9.5 |
Package Type | SC-88-6 / SC-70-6 / SOT-363-6 |
N-Channel 25 V 4 Ohm Dual Surface Mount Digital FET - SC-70-6 | Future Electronics |
MOSFET, DUAL, N, SMD, 6-SC-70 | Farnell |
Transistor Polarity:Dual N Channel | element14 |
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin SC-70 T/R | Avnet America |
Where can I find additional details, specifications and documents for a FDG6301N?
Additional datasheets, footprints and schematics for FDG6301N are listed on our Part Details page. You can also find images and similar parts to FDG6301N on this page.
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What category does FDG6301N fall under?
The FDG6301N is listed under Discrete & Power Modules > MOSFETs.
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Is the FDG6301N RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
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