DN1509K1-G Part Information

Details for DN1509K1-G by Microchip Technology


Part Description

This low threshold, depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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Part Features

  • High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakages

Part Specifications

BVdsx min (V) 90
RDS (Ohms) 6
Vgs(off) min (V) -1.8
Vgs(off) max (V) -3.5
Package SOT-89, SOT-23
Temperature Range -55C to +150C

Alternative Part Descriptions

  • MOSFET, DEPLETION-MODE, 90V, 6 OHM, 5 SOT-23 T/R | Newark Electronics
  • Trans MOSFET N-CH 90V 0.2A 5-Pin SOT-23 T/R | Avnet America
  • Transistor: N-MOSFET; unipolar; 90V; 0.3A; 490mW; SOT23-3 | Transfer Multisort Elektronik
  • MOSFET, DEPLETION-MODE, 90V, 6 Ohm5 SOT-23 T/R | Allied Electronics & Automation
  • Trans MOSFET N-CH 90V 0.2A 5-Pin SOT-23 T/R | Avnet Europe

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