CSD19505KTT Part Information

Details for CSD19505KTT by Texas Instruments

Electronic & Electrical Components>Semiconductors - Discretes>Transistors

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Part Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 212A
Drain Source Voltage Vds 80V
On Resistance Rds(on) 0.0026ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2.6V
Power Dissipation Pd 300W
Transistor Case Style TO-263
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL MSL 2 - 1 year
SVHC No SVHC (27-Jun-2018)

Alternative Part Descriptions

  • MOSFET, N-CH, 80V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:212A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Dissipation RoHS Compliant: Yes | Newark Electronics
  • 80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm | Texas Instruments

Frequently Asked Questions

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The CSD19505KTT is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the CSD19505KTT RoHS compliant?

This part has not been flagged as RoHS Compliant.

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Authorised distributors including Newark Electronics and Texas Instruments have stock available or on a lead time for CSD19505KTT.

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