LM5109BQNGTTQ1

Electronic & Electrical Components

> Semiconductors - ICs

> Driver & Interface ICs

Organise Price Comparison Results by
distributor space
Distributor Statistics for LM5109BQNGTTQ1
Total in Stock: -in-stock
Lowest MOQ: -
SELECT OPTIONS
Lowest price for your selection
-
in Stock
-
Average Price: - per unit
Stocking Distributors: -
Price Comparison for LM5109BQNGTTQ1
Details for Texas Instruments

LM5109BQNGTTQ1

High Voltage 1A Peak Half Bridge Gate Driver
Buy Directly from Texas Instruments (5519 in Stock)
$0.6300 per unit
Series Information for LM5109BQNGTTQ1 - Texas Instruments

Features

  • feature
    1-A Peak Output Current (1.0-A Sink/1.0-A Source)
  • feature
    AEC-Q100 Qualified With the Following Results u2013 Device Temperature Grade 1 u2013 Device HBM ESD Classification Level 1C u2013 Device CDM ESD Classification Level C4A
  • feature
    Bootstrap Supply Voltage to 108-V DC
  • feature
    Drives 1000-pF Load with 15-ns Rise and Fall Times
  • feature
    Drives Both a High-Side and Low-Side N-Channel MOSFET
  • feature
    Excellent Propagation Delay Matching (2 ns Typical)
  • feature
    Fast Propagation Times (30 ns Typical)
  • feature
    Independent TTL/CMOS Compatible Inputs
  • feature
    Low Power Consumption
  • feature
    Qualified for Automotive Applications
  • feature
    Supply Rail Under-Voltage Lockout
  • feature
    Thermally-Enhanced WSON-8 Package

Description

MOSFET DRIV HALFBRIDGE WSON8
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

Specifications

Driver Configuration:
Half Bridge
Peak Output Current:
1A
Supply Voltage Min:
8V
Supply Voltage Max:
14V
Driver Case Style:
WSON
No. of Pins:
8Pins
Input Delay:
32ns
Output Delay:
32ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualification Standard:
AEC-Q100
RoHS Phthalates Compliant:
Yes
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (27-Jun-2018)

Alternate Descriptions

Avnet America

MOSFET DRVR 1A 2-OUT Hi/Lo Side Non-Inv 8-Pin WSON

Avnet America product

Avnet Europe

MOSFET DRVR 1A 2-OUT Hi/Lo Side Non-Inv 8-Pin WSON

Avnet Europe product

Texas Instruments

High Voltage 1A Peak Half Bridge Gate Driver

Texas Instruments product