FDG6303N MOSFETs by ON Semiconductor

Dual N-Channel Digital FET 25V, 0.50A, 0.45Ω

Status: Active
Series: FDG6303N
RoHS: Compliant
Download Datasheet Visit Manufacturer Site View Pricing & Stock

These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Where to Buy

Prices starting from US$0.10

Distributor Stock
Logo for Future Electronics
Future Electronics
from US$0.10
117,000
in stock
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Logo for element14
element14
from US$0.26
22,660
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Farnell
from US$0.20
16,660
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Newark Electronics
from US$0.17
6,000
in stock
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Avnet America
from US$0.10
6,000
in stock
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Logo for RS
RS
from US$0.10
2,625
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Logo for Transfer Multisort Elektronik
Transfer Multisort Elektronik
from US$0.14
1,125
in stock
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Avnet Asia
from US$0.11
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EBV Elektronik
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Avnet Silica
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Features

25 V, 0.50 A continuous, 1.5 A Peak.
RDS(ON) = 0.45 Ω @ VGS= 4.5 V,
RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
Applications
This product is general usage and suitable for many different applications.

Specifications

Description FDG6303N
Compliance Pb-free Halide free
Channel Polarity N-Channel
Configuration Dual
V(BR)DSS Min (V) 25
VGS Max (V) 8
VGS(th) Max (V) 1.5
ID Max (A) 0.5
PD Max (W) 0.3
RDS(on) Max @ VGS = 2.5 V (mΩ) Q1=Q2=600
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1=Q2=450
RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) 1.4
Qg Typ @ VGS = 10 V (nC) 1.64
Ciss Typ (pF) 50
Package Type SC-88-6 / SC-70-6 / SOT-363-6

Alternative Descriptions

Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SC70-6 | Future Electronics
Transistor Polarity:Dual N Channel | element14
MOSFET, NN | Farnell
Dual N Channel Mosfet, 25V, Sc-70 | Newark Electronics
MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 Milliohms, SOT-363, 6 Pins | Avnet America
MOSFET N-Channel 25V 0.5A SC-70-6 | RS
Transistor: N-MOSFET x2 | Transfer Multisort Elektronik


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDG6303N?

Additional datasheets, footprints and schematics for FDG6303N are listed on our Part Details page. You can also find images and similar parts to FDG6303N on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDG6303N on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDG6303N price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDG6303N fall under?

The FDG6303N is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDG6303N when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDG6303N you can contact the distributor directly for product support, shipping queries etc.

Is the FDG6303N RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDG6303N have stock available?

Authorised distributors including Future Electronics, element14, Farnell, Newark Electronics and Avnet America have stock available or on a lead time for FDG6303N.

How do I check stock and lead times for all distributors?

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