FDC6310P MOSFETs by ON Semiconductor

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ


These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Where to Buy

Prices starting from US$0.20

Distributor Stock
Logo for Farnell
Farnell
from US$0.22
5,905
in stock
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Logo for Newark Electronics
Newark Electronics
from US$0.24
5,905
in stock
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Logo for element14
element14
from US$0.22
5,905
in stock
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Logo for EBV Elektronik
EBV Elektronik
-
18,000
in stock
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Logo for Future Electronics
Future Electronics
from US$0.20
-
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Logo for Avnet America
Avnet America
from US$0.20
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Logo for Avnet Asia
Avnet Asia
from US$0.21
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Logo for Avnet Silica
Avnet Silica
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Features

-2.2 A, -20 V
RDS(on) = 125m Ω @ VGS = -4.5 V
RDS(on) = 190m Ω @ VGS = -2.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
SuperSOT™ -6 package: small footprint 72%smaller than standard SO-8; low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.

Specifications

Description FDC6310P
Compliance Pb-free Halide free
Channel Polarity P-Channel
Configuration Dual
V(BR)DSS Min (V) -20
VGS Max (V) 12
VGS(th) Max (V) -1.5
ID Max (A) -2.2
PD Max (W) 0.96
RDS(on) Max @ VGS = 2.5 V (mΩ) Q1=Q2=190
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1=Q2=125
RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) 5.4
Qg Typ @ VGS = 10 V (nC) 3.7
Ciss Typ (pF) 337
Package Type TSOT-23-6

Alternative Descriptions

Mosfet, 2 P-Ch, -20V, -2.2A, Sot-23-6 | Newark Electronics
MOSFET, 2 P-CH, -20V, -2.2A, SOT-23-6 | element14
Transistor MOSFET Array Dual P-CH 20V 2.2A 6-Pin TSOT-23 T/R | EBV Elektronik
Dual P-Channel 20V 125 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6 | Future Electronics


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDC6310P?

Additional datasheets, footprints and schematics for FDC6310P are listed on our Part Details page. You can also find images and similar parts to FDC6310P on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDC6310P on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDC6310P price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDC6310P fall under?

The FDC6310P is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDC6310P when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDC6310P you can contact the distributor directly for product support, shipping queries etc.

Is the FDC6310P RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDC6310P have stock available?

Authorised distributors including Newark Electronics, element14, Farnell, EBV Elektronik and Future Electronics have stock available or on a lead time for FDC6310P.

How do I check stock and lead times for all distributors?

Stock availability and lead times will be displayed for FDC6310P often in real-time on the comparison pages.

What if I can't find stock of FDC6310P?

You can fill out our help required form which you can use to request a quote for FDC6310P from some of our verified obsolescence suppliers. Alternatively, contact us via our web chat in the bottom left of your screen and one of our team will try to help.

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