SRAM

SRAM, which stands for Static Random Access Memory, is a semiconductor memory for general computing applications, microprocessors, and electronics. It uses flip-flop, otherwise known as bi-stable latching circuitry, in storing each bit. Since it is static, data does not have to be dynamically updated. However, SRAM is volatile, so it does not hold data when the memory device loses power. As such, data loss is inevitable.

SRAM’s memory cell has four transistors. They are structured into cross-coupled inverters. For its read and write operations, controlling memory cell access requires the use of two more transistors, which explains the term 6T memory cell.

Characteristics of Static Random Access Memory

There are several characteristics that set SRAM apart from other semiconductor memory:

  • It is faster than its dynamic counterpart – the DRAM (Dynamic Random Access Memory).
  • It uses lesser power than DRAMs.
  • It has level 1 or 2 cache usage/units as general application.
  • It is commonly used as a memory cache.
  • It has low packaging density.
  • Its storage capacity ranges from 1 to 16MB.
  • It is small and typically placed between your computer processor and main memory.
  • It uses switches to change current direction.

Types of SRAMs

There are many types of SRAMs, but the most common ones are PSRAM and nvSRAM.

  • PSRAM, also known as Pseudostatic SRAM, combines a self-refresh circuit with a Dynamic Random Access Memory storage core. Even with its low-power characteristic, the PSRAM is a high-performance device. Its top speed in synchronous interface is 133MHz.
  • nvSRAM, also known as non-volatile SRAM, is equipped with the essential SRAM features and function. However, since it is non-volatile, nvSRAM is capable of saving information and data even when it loses power. It’s used for various purposes and situations that require critical data preservation like medical, aerospace, and networking. nvSRAM is a great alternative to battery-backed static random-access memory (BBSRAM).

Parts from SRAM Category

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CY62128ELL-45ZXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 128KX8BIT, 45NS, TSOP-I-32; Memory Size:1Mbit; SRAM Memory Configuration:128K x 8bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-I; No. of Pins:32Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62128EV30LL-45ZXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 128KX8BIT, 45NS, TSOP-I-32; Memory Size:1Mbit; SRAM Memory Configuration:128K x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:TSOP-I; No. of Pins:32Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62128EV30LL-45ZXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 128KX8BIT, 45NS, TSOP-I-32; Memory Size:1Mbit; SRAM Memory Configuration:128K x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:TSOP-I; No. of Pins:32Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62138FV30LL-45ZXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 2MBIT, 256KX8BIT, 45NS, TSOP-I-32; Memory Size:2Mbit; SRAM Memory Configuration:256K x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:TSOP-I; No. of Pins:32Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62146ELL-45ZSXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 256KX16BIT, 45NS, TSOPII-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:45ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

CY62146EV30LL-45BVXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62146EV30LL-45ZSXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 256KX16BIT, 45NS, TSOPII-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:45ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

CY62147EV30LL-45BVXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62148ELL-45ZSXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 512KX8BIT, 45NS, TSOP-II-32; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-II; No. of Pins:32Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62148ELL-55SXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 512K X 8BIT, 55NS, SOIC-32; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:SOIC; No. of Pins:32Pins; Access Time:55ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

Cypress - Infineon Technologies

SRAM, 4MBIT, 512K X 8BIT, 55NS, SOIC-32; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:SOIC; No. of Pins:32Pins; Access Time:55ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62157EV30LL-45ZSXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 8MBIT, 512KX16BIT, 45NS, TSOPII-44; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:45ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

CY62158EV30LL-45BVXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 8MBIT, 1M X 8BIT, 45NS, VFBGA-48; Memory Size:8Mbit; SRAM Memory Configuration:1M x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY62167ELL-45ZXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 16MBIT, 2MX8BIT/1MX16BIT, TSOPI-48; Memory Size:16Mbit; SRAM Memory Configuration:2M x 8bit / 1M x 16bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-I; No. of Pins:48Pins; Access Time:45ns; Operating Temperature RoHS Compliant: Yes

CY62168EV30LL-45BVXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 16MBIT, 2M X 8BIT, 45NS, VFBGA-48; Memory Size:16Mbit; SRAM Memory Configuration:2M x 8bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:45ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY7C1021CV33-12ZSXE from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 64KX16BIT, 12NS, TSOP-II-44; Memory Size:1Mbit; SRAM Memory Configuration:64K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:12ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY7C1021D-10ZSXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 64KX16BIT, 10NS, TSOP-II-44; Memory Size:1Mbit; SRAM Memory Configuration:64K x 16bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY7C1021DV33-10BVXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 64K X 16BIT, 10NS, VFBGA-48; Memory Size:1Mbit; SRAM Memory Configuration:64K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:10ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY7C1021DV33-10ZSXIT from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 1MBIT, 64KX16BIT, 10NS, TSOP-II-44; Memory Size:1Mbit; SRAM Memory Configuration:64K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes

CY7C1041G-10ZSXI from Cypress - Infineon Technologies
Cypress - Infineon Technologies

SRAM, 4MBIT, 256KX16BIT, 10NS, TSOPII-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

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