Ferroelectric RAM - FRAM

Ferroelectric RAM – FRAM is a non-volatile standalone random access memory that allows users to capture and store important data even when there is no power. Alternatively known as F-RAM and FeRAM, its construction is similar to dynamic random access memory, except for the fact that it utilizes a ferroelectric layer for non-volatility. DRAM uses a dielectric layer. FRAM exhibits the functionality of a flash memory.

Ferroelectric RAM does not compromise energy efficiency and speed. Its density ranges from 4Kbit to 16Mbit. FRAM is often lodged into CMOS-based chips, which allows microcontroller units to use ferroelectric memories. It has low power consumption. Its write performance is faster by at least 30,000 times. FRAM can also hold a much larger number of write-erase cycles.

Although its name may imply that it does, Ferroelectric RAM typically utilizes lead zirconate titanate, not iron.

Dudley Allen Buck proposed FRAM as his master’s thesis. His “Ferroelectrics for Digital Information Storage and Switching” study came out in 1952. Three years later, Bell Telephone Laboratories began experimenting with ferroelectric crystal memories. FRAM development started in the latter part of the 1980s but was commercialized only in the 1990s.

Ferroelectric random access memory is essential in various applications, including:

  • Industrial microcontrollers
  • Medical equipment
  • Instrumentation
  • Automotive systems

Notwithstanding its many benefits, FRAM is not as popular as Flash and DRAM.

Features

The following are the most essential features (and advantages) of ferroelectric RAM:

  • Radiation-tolerant
  • Uses less power at only 80 µA/MHz (average active power)
  • Retains data even if power is switched off
  • Is a high endurance device
  • Its read and write performance is faster than other memory alternatives
  • Offers better security than the other types of memory
  • Is overwritable
  • Is cost-efficient

Despite its significant features and many advantages, ferroelectric random access memory still holds a small portion of the general semiconductor market.

Parts from Ferroelectric RAM - FRAM Category

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FM24CL04B-GTR from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 4KBIT, 1MHZ, SOIC-8; Memory Size:4Kbit; Memory Organisation:512 x 8bit; IC Interface Type:I2C; Clock Frequency:1MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

FM24CL64B-DG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 64KBIT, 1MHZ, DFN-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:I2C; Clock Frequency:1MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:DFN; No. of Pins:8Pins; Operating RoHS Compliant: Yes

FM24V02A-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 256KBIT, 3.4MHZ, SOIC-8; Memory Size:256Kbit; Memory Organisation:32K x 8bit; IC Interface Type:I2C; Clock Frequency:3.4MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; RoHS Compliant: Yes

FM25CL64B-DG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 64KBIT, 20MHZ, DFN-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:DFN; No. of Pins:8Pins; Operating RoHS Compliant: Yes

FM25L04B-DG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 4KBIT, 20MHZ, DFN-8; Memory Size:4Kbit; Memory Organisation:512 x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:DFN; No. of Pins:8Pins; Operating RoHS Compliant: Yes

FM25L16B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 16KBIT, 20MHZ, SOIC-8; Memory Size:16Kbit; Memory Organisation:2K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; OperatingRoHS Compliant: Yes

FM25040B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 4KBIT, 20MHZ, SOIC-8; Memory Size:4Kbit; Memory Organisation:512 x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

CY15B064J-SXE from Cypress - Infineon Technologies
Cypress - Infineon Technologies

FRAM, CY15B064J-SXE ROHS COMPLIANT: YES

FM28V202A-TG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 2MBIT, 33MHZ, TSOP-II-44; Memory Size:2Mbit; Memory Organisation:128K x 16bit; IC Interface Type:Parallel; Clock Frequency:33MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of RoHS Compliant: Yes

FM3164-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 64KBIT, 1MHZ, SOIC-14; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:I2C; Clock Frequency:1MHz; Supply Voltage Min:2.7V; Supply Voltage Max:5.5V; Memory Case Style:SOIC; No. of Pins:14Pins; OperatingRoHS Compliant: Yes

FM24CL04B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM24CL16B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM24C16B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM24C64B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM25C160B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM25L04B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NV, 4KBIT, 20MHZ, SOIC-8; Memory Size:4Kbit; Memory Organisation:512 x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins RoHS Compliant: Yes

FM25L16B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM25640B-G from Cypress - Infineon Technologies
Cypress - Infineon Technologies

TUBE / F-RAM MEMORY SERIAL ROHS COMPLIANT: YES

FM22LD16-55-BG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NON-VOL, 4MBIT, FBGA-48; Memory Size:4Mbit; Memory Organisation:256K x 16bit; IC Interface Type:Parallel; Clock Frequency:-; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; RoHS Compliant: Yes

FM24CL16B-DG from Cypress - Infineon Technologies
Cypress - Infineon Technologies

F-RAM, NON-VOL, 16KBIT, 1MHZ, DFN-8; Memory Size:16Kbit; Memory Organisation:2K x 8bit; IC Interface Type:I2C; Clock Frequency:1MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:DFN; No. of Pins:8Pins; RoHS Compliant: Yes

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