DRAM

DRAM stands for “dynamic random access memory”. It is a type of random access memory (RAM) and is considered the most commonly used and available computer memory. It is read as DEE-RAM.

Invented by Robert Dennard in 1968, DRAM was first introduced into the market by Intel. It is positioned near the processor, which means it can be quickly accessed when the computer needs it for various processes.

DRAM both has a capacitor and transistor. It is a volatile memory, so it needs power to keep data. It can be altered as well, as stored data does not have to be deleted before it is overwritten.

This small, efficient, and fast-working memory is labeled as dynamic because of its slow capacitor discharge. It is also a random access memory because the same time frame is used to reach any memory address. DRAM is best suited for high-storage and high-capacity memory devices. DRAM is used for a variety of applications and products, including:

  • Digital cameras
  • Video cards
  • Portable media players and other consumer electronics
  • Automotive electronics
  • Smartphones
  • Desktop and laptop computers
  • GPS
  • Other personal and mobile devices

Types

Dynamic random access memory is categorized into six types: FPM, Asynchronous, BEDO, EDO, RDRAM, and SDRAM.

  • FPM, also known as Fast Page Mode Dynamic Random Access Memory, is distinct because it runs faster than other DRAM types.
  • Asynchronous DRAM is one of the older types of dynamic random access memory. It was used in the earlier models of personal computers. It is not synchronized with the computer’s system clock. Asynchronous DRAM is the basis for other DRAM types.
  • BEDO (Burst Extended Data Out) DRAM maximizes performance through one burst, which is capable of processing four memory addressed all at once.
  • EDO (Extended Data Out) DRAM increases performance over Fast Page Mode DRAM, which is why it is alternatively called Hyper Page Model.
  • RDRAM is Rambus DRAM, which was created for Rambus Inc. It is capable of functioning at faster speeds.
  • SDRAM (Synchronous DRAM) is synchronized with the computer’s clock, so it is faster than the other types of DRAM and RAM.

Parts from DRAM Category

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H5TQ2G63DFR-RDC from Hynix Semiconductor
Hynix Semiconductor

SDRAM, DDR3, 2GB (X16), 96FBGA; Memory Type:DRAM - Synchronous; DRAM Memory Configuration:128M x 16bit; Access Time:-; Page Size:2048Byte; Memory Case Style:FBGA; No. of Pins:96; IC Interface Type:-; Operating Temperature Min:0°C; RoHS Compliant: Yes

H5TQ4G63MFR-H9C from Hynix Semiconductor
Hynix Semiconductor

SDRAM, DDR3, 4GB (X16), 96FBGA; Memory Type:DRAM - Synchronous; DRAM Memory Configuration:256M x 16bit; Access Time:-; Page Size:2048Byte; Memory Case Style:FBGA; No. of Pins:96; IC Interface Type:-; Operating Temperature Min:0°C; RoHS Compliant: Yes

IS43TR16256A-125KBL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 256M X 16BIT, BGA-96; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:800MHz; Memory Case Style:BGA; No. of Pins:96Pins; Supply Voltage Nom:1.5V; Access Time:-; MSL:- RoHS Compliant: Yes

IS43TR16256A-125KBLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 256M X 16BIT, BGA-96; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:800MHz; Memory Case Style:BGA; No. of Pins:96Pins; Supply Voltage Nom:1.5V; Access Time:-; MSL:MSL 3 - 168 hours RoHS Compliant: Yes

IS43TR16640A-125JBLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 64M X 16BIT, FBGA-96; DRAM Type:DDR3; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:800MHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.5V; Access Time:-; MSL:- RoHS Compliant: Yes

NTE4164 from Nte Electronics
Nte Electronics

DRAM Memory IC; DRAM Type:SDRAM; DRAM Density:64Kbit; DRAM Memory Configuration:-; Clock Frequency:-; Memory Case Style:DIP; No. of Pins:16Pins; Supply Voltage Nom:5V; Access Time:150ns; Operating Temperature Min:-; Product Range:-

IS42S16400F-7TLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, IND, 4M X 16, 3V, 54TSOP2; DRAM Memory Configuration:4 BLK (1M x 16); Access Time:5.4ns; Page Size:64Mbit; No. of Pins:54Pins; Memory Case Style:TSOP-II; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; IC RoHS Compliant: Yes

IS41LV16100D-50TLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 16MBIT, TSOP-II-44; DRAM Type:EDO; DRAM Density:16Mbit; DRAM Memory Configuration:1M x 16bit; Clock Frequency:-; Memory Case Style:TSOP-II; No. of Pins:44Pins; Supply Voltage Nom:3.3V; Access Time:50ns; MSL:- RoHS Compliant: Yes

IS41LV16105D-50TLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 16MBIT, TSOP-II-44; DRAM Type:FP; DRAM Density:16Mbit; DRAM Memory Configuration:1M x 16bit; Clock Frequency:-; Memory Case Style:TSOP-II; No. of Pins:44Pins; Supply Voltage Nom:3.3V; Access Time:50ns; MSL:- RoHS Compliant: Yes

IS43DR16640C-25DBLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 64M X 16BIT, WBGA-84; DRAM Memory Configuration:64M x 16bit; Memory Case Style:WBGA; No. of Pins:84Pins; IC Interface Type:-; Access Time:-; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product RoHS Compliant: Yes

IS43TR16128C-125KBL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 128M X 16BIT, BGA-96; DRAM Memory Configuration:128M x 16bit; Memory Case Style:BGA; No. of Pins:96Pins; IC Interface Type:-; Access Time:-; Page Size:-; Operating Temperature Min:0°C; Operating Temperature Max:95°C; Product RoHS Compliant: Yes

IS43TR16256AL-125KBL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 256M X 16BIT, BGA-96; DRAM Memory Configuration:256M x 16bit; Memory Case Style:BGA; No. of Pins:96Pins; IC Interface Type:-; Access Time:-; Page Size:-; Operating Temperature Min:0°C; Operating Temperature Max:95°C; Product RoHS Compliant: Yes

IS43TR16256AL-125KBLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

DRAM, 256M X 16BIT, BGA-96; DRAM Memory Configuration:256M x 16bit; Memory Case Style:BGA; No. of Pins:96Pins; IC Interface Type:-; Access Time:-; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature Max:95°C; Product RoHS Compliant: Yes

IS42S16160B-7BL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 256MBIT, 143MHZ, TSOP-54; DRAM Type:SDR; DRAM Density:256Mbit; DRAM Memory Configuration:4 BLK (4M x 16); Clock Frequency:143MHz; Memory Case Style:TSOP; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:7ns; MSL:- RoHS Compliant: Yes

IS42S16400D-7TL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 64MBIT, 143MHZ, TSOP-54; DRAM Type:SDRAM; DRAM Density:64Mbit; DRAM Memory Configuration:1M x 16bit; Clock Frequency:143MHz; Memory Case Style:TSOP; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:7ns; MSL:- RoHS Compliant: Yes

IS42S16800D-7TL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 128MBIT, 143MHZ, TSOP-54; DRAM Type:SDR; DRAM Density:128Mbit; DRAM Memory Configuration:16M x 8bit; Clock Frequency:143MHz; Memory Case Style:TSOP; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:7ns RoHS Compliant: Yes

IS42S32800B-7BL from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 256MBIT, 143MHZ, BGA-90; DRAM Type:SDR; DRAM Density:256Mbit; DRAM Memory Configuration:4 BLK (2M x 32); Clock Frequency:143MHz; Memory Case Style:BGA; No. of Pins:90Pins; Supply Voltage Nom:3.3V; Access Time:7ns RoHS Compliant: Yes

IS42S16320D-7BLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 512MBIT, 143MHZ, BGA-54; DRAM Memory Configuration:32M x 16bit; Memory Case Style:BGA; No. of Pins:54Pins; IC Interface Type:LVTTL; Access Time:7ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C;RoHS Compliant: Yes

IS42VM16160K-75BLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, 256MBIT, 133MHZ, BGA-54; DRAM Memory Configuration:16M x 16bit; Memory Case Style:BGA; No. of Pins:54Pins; IC Interface Type:LVCMOS; Access Time:7.5ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes

IS43TR16256A-15HBLI from Integrated Silicon Solution (Issi)
Integrated Silicon Solution (Issi)

SDRAM, DDR3, 4GB, 1333MT/S, FBGA-96; DRAM Memory Configuration:256M x 16bit; Memory Case Style:FBGA; No. of Pins:96Pins; IC Interface Type:-; Access Time:13.5ns; Page Size:16Kbit; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes

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