MOSFET Transistors

MOSFET transistors, also known as metal-oxide-semiconductor field-effect transistors and metal-oxide-silicon transistors, are utilized for amplifying or switching circuit voltages. They are current-controlled electrical components equipped with three terminals called the Source, Gate, and Drain. The specific function of MOSFET transistors is to control the current flow of the Source and Drain, while the Gate applies to voltage.

MOSFET transistors are popularly used primarily because of their versatility. These components are used in analog and digital circuits, and often function as a power device. MOSFET transistors are a type of FET or field effect transistor; they are ideal for higher current applications.

These transistors are typically preferred over bipolar transistors because load-current control is possible even if there’s only a minimal current. Additionally, MOSFET transistors are compact in size, which is why it is easy to fabricate and design them into a single chip.

MOSFET transistors were invented in November 1959 at Bell Labs by Dawon Kahng and Mohamed M. Atalla. They were first publicly introduced in 1960. They are mass-produced and miniaturized for use in various applications and products including memory devices, microprocessors, digital wristwatch, and pocket calculators.

Types

There are two types of MOSFET transistors: Enhancement and Depletion.

  1. Enhancement Type MOSFET transistors can be likened to a normally open switch. They need a VGS or Gate-Source voltage for the device switch to turn ON.
  2. Depletion Type MOSFET transistors are the opposite of Enhancement Types and therefore can be likened to a normally closed switch. The VGS is required to switch OFF the device

There are many other types of MOSFET transistors, including:

  • NMOS Logic
  • Complementary Metal-Oxide-Semiconductor or CMOS Logic
  • PMOS Logic
  • FGMOS or Floating-Gate MOSFETs
  • MISFETs or Metal Insulator Semiconductor Field Effect Transistors
  • Double-diffused Metal Oxide Semiconductors or DMOS
  • Power MOSFETs
  • RHBD (Radiation Hardened By Design)
  • MOS Sensors
  • Bipolar-MOS Transistors
  • TFT (Thin-Film Transistor)
  • MOS Capacitors
  • Multi-Gate Field Effect Transistors

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Parts from MOSFET Transistors Category

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SI1926DL-T1-E3 from Vishay
Vishay

MOSFET, DUAL N-CH, 60V, 0.34A, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:370mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; RoHS Compliant: Yes

SI7272DP-T1-GE3 from Vishay

MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0076ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; RoHS Compliant: Yes

SI7997DP-T1-GE3 from Vishay

MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V;RoHS Compliant: Yes

IPG20N06S2L35ATMA1 from Infineon

DUAL MOSFET, N-CH, 20A, 55V, TDSON; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

SI3932DV-T1-GE3 from Vishay

MOSFET, DUAL N-CH, 30V, 3.7A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

SI4946BEY-T1-GE3 from Vishay

MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

FDMA2002NZ from On Semiconductor
On Semiconductor

TRANSISTOR ARRAY, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

FDS8949 from On Semiconductor
On Semiconductor

DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1.9V RoHS Compliant: Yes

SP8K52FRATB from Rohm
Rohm

MOSFET, AEC-Q101, DUAL, 3A, 100V, SOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

SI1553CDL-T1-GE3. from Vishay

Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.325ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:6Pins RoHS Compliant: No

SI1902CDL-T1-GE3. from Vishay

Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.1A; On Resistance Rds(on):0.195ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V RoHS Compliant: Yes

SI7232DN-T1-GE3. from Vishay

Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.0135ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V RoHS Compliant: Yes

Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.0077ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V RoHS Compliant: No

SI4200DY-T1-GE3. from Vishay

Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:7.3A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V RoHS Compliant: No

EM6K7T2CR from Rohm
Rohm

MOSFET, DUAL N-CH, 20V, 0.2A, 150DEG C; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:2.5V; Threshold Voltage Vgs:1V; PowerRoHS Compliant: Yes

ALF08NP16V5 from Tt Electronics/Semelab
Tt Electronics/Semelab

MOSFET,AUDIO, NP CHANNEL,160V,8A,TO-247; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; On Resistance Rds(on):-; Transistor Mounting:Through Hole; No. of Pins:5Pins RoHS Compliant: Yes

QS8M51FRATR from Rohm
Rohm

MOSFET, AEC-Q101, N&P, 100V, 2A, TSMT ROHS COMPLIANT: YES

SP8J5FRATB from Rohm
Rohm

MOSFET, AEC-Q101, DUAL P, -30V, -7A, SOP ROHS COMPLIANT: YES

Rohm

MOSFET, AEC-Q101, DUAL N, 30V, 6A, SOP ROHS COMPLIANT: YES

SP8M10FRATB from Rohm
Rohm

MOSFET, AEC-Q-101, N&P, 30V, 7A, SOP ROHS COMPLIANT: YES

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