IGBT Arrays & Modules
Parts from IGBT Arrays & Modules Category
IGBT MODULE, NPN, 1.2KV, 642A; DC Collector Current:642A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Junction Temperature, Tj Max:125°C; IGBT Termination:Press Fit; Product Range:- RoHS Compliant: Yes
IGBT MOD, N-CH, 1.7KV, 300A, 150DEG C; Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case RoHS Compliant: Yes
IGBT MOD, N-CH, 1.2KV, 450A, 150DEG C; Transistor Polarity:N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT Module; DC Collector Current:151A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:Press Fit; Collector Emitter Voltage V(br)ceo:800mV RoHS Compliant: Yes
IGBT Module; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):1.2V; Power Dissipation Pd:1.1kW; Junction Temperature, Tj Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage V(br)ceo:250V RoHS Compliant: No
SINGLE IGNITION IGBT, 420V, 15A; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):410V; Power Dissipation Pd:150W; Junction Temperature, Tj Max:175°C; IGBT Termination:Solder; Product Range:-; No. of Pins:3Pins RoHS Compliant: Yes
IGBT MODULE, SIX, 1.7KV, 260A; DC Collector Current:260A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Junction Temperature, Tj Max:125°C; IGBT Termination:Press Fit; Product Range:- RoHS Compliant: Yes
IGBT MODULE, SINGLE, 600V, 54A; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Junction Temperature, Tj Max:150°C; IGBT Termination:Press Fit; Product Range:- RoHS Compliant: Yes
IGBT MODULE, SINGLE, 1.7KV, 430A; DC Collector Current:430A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Junction Temperature, Tj Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage V(br)ceo:1.7kVRoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 240 A, 1.75 V, 1.1 kW, 1.2 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 320 A, 1.75 V, 1.1 kW, 1.2 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 310 A, 1.95 V, 1.25 kW, 1.7 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 365 A, 1.55 V, 940 W, 650 V, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 450 A, 1.75 V, 1.6 kW, 1.2 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 440 A, 1.95 V, 1.8 kW, 1.7 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 485 A, 1.55 V, 1.25 kW, 650 V, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, NPN, 25 A, 1.85 V, 160 W, 1.2 kV, Module RoHS Compliant: Yes
IGBT Array & Module Transistor, NPN, 50 A, 1.85 V, 280 W, 1.2 kV, Module RoHS Compliant: Yes