Bipolar RF Transistors

Parts from Bipolar RF Transistors Category

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BFP740H6327XTSA1 from Infineon
Infineon

RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:44GHz; Power Dissipation Pd:160mW; DC Collector Current:45mA; DC Current Gain hFE:250hFE; RF Transistor Case:SOT-343; No. of RoHS Compliant: Yes

BFR182E6327HTSA1 from Infineon
Infineon

RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No. of RoHS Compliant: Yes

BFP196E6327HTSA1 from Infineon
Infineon

RF TRANSISTOR, NPN, 0.15A, 12V, SOT-143; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:7.5GHz; Power Dissipation Pd:700mW; DC Collector Current:150mA; RF Transistor Case:SOT-143 RoHS Compliant: Yes

BFP640ESDH6327XTSA1 from Infineon

RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.7V; Transition Frequency ft:45GHz; Power Dissipation Pd:160mW; DC Collector Current:45mA; DC Current Gain hFE:250hFE; RF Transistor Case:TSFP; No. of RoHS Compliant: Yes

2N3906 from Nte Electronics
Nte Electronics

RF TRANSISTOR, PNP, 80V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:625mW; DC Collector Current:800mA; RF Transistor Case:TO-92; No. of Pins:3Pins RoHS Compliant: Yes

BFR92PE6327HTSA1 from Infineon
Infineon

RF TRANSISTOR, NPN, 15V 5GHZ SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; RF Transistor Case:SOT-23; No. of Pins:3Pins RoHS Compliant: Yes

BFS17PE6327HTSA1 from Infineon
Infineon

RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:2.5GHz; Power Dissipation Pd:280mW; DC Collector Current:25mA; RF Transistor Case:SOT-23; No. of Pins:3Pins RoHS Compliant: Yes

BFU610F,115 from Nxp

TRANSISTOR, RF, NPN, 5.5V, 15GHZ, SOT-343F, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:15GHz; Power Dissipation Pd:136mW; DC Collector Current:2mA; RF Transistor Case:SOT-343FRoHS Compliant: Yes

BFU630F,115 from Nxp

TRANSISTOR, RF, NPN, 5.5V, 21GHZ, SOT-343F, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:21GHz; Power Dissipation Pd:200mW; DC Collector Current:3mA; RF Transistor Case:SOT-343FRoHS Compliant: Yes

BFU660F,115 from Nxp

TRANSISTOR, RF, NPN, 5.5V, 21GHZ, SOT-343F, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:21GHz; Power Dissipation Pd:225mW; DC Collector Current:30mA; No. of Pins:4Pins; MSL:- RoHS Compliant: Yes

BFU690F,115 from Nxp

TRANSISTOR, RF, NPN, 5.5V, 18GHZ, SOT-343F, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:18GHz; Power Dissipation Pd:230mW; DC Collector Current:70mA; No. of Pins:4Pins; MSL:- RoHS Compliant: Yes

BFP420FH6327XTSA1. from Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:25GHz; Power Dissipation Pd:210mW; DC Collector Current:60mA; RF Transistor Case:TSFP; No. of Pins:4Pins; DC Current Gain hFE:60hFE RoHS Compliant: Yes

BFP460H6327XTSA1. from Infineon
Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:22GHz; Power Dissipation Pd:230mW; DC Collector Current:70mA; RF Transistor Case:SOT-343; No. of Pins:4Pins; DC Current Gain hFE:90hFE RoHS Compliant: Yes

BFR193E6327HTSA1. from Infineon
Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; RF Transistor Case:SOT-23; No. of Pins:3Pins; DC Current Gain hFE:70hFE RoHS Compliant: Yes

BC847BPDW1T1G. from On Semiconductor
On Semiconductor

TRANSISTOR, NPN/PNP, 100MHZ, SOT-363-6; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:380mW; DC Collector Current:100mA; RF Transistor Case:SOT-363 RoHS Compliant: Yes

MJE171G from On Semiconductor
On Semiconductor

RF TRANSISTOR, PNP, -60V, 50MHZ, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:3A; RF Transistor Case:TO-225; No. of Pins:3PinsRoHS Compliant: Yes

BFP196E6327HTSA1. from Infineon
Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:65mA; RF Transistor Case:SOT-143; No. of Pins:4Pins; DC Current Gain hFE:100hFE RoHS Compliant: Yes

BFP420H6327XTSA1. from Infineon
Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5V; Transition Frequency ft:25GHz; Power Dissipation Pd:210mW; DC Collector Current:60mA; RF Transistor Case:SOT-343; No. of Pins:4Pins; DC Current Gain hFE:95hFE RoHS Compliant: Yes

BFP540FESDH6327XTSA1. from Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:30GHz; Power Dissipation Pd:250mW; DC Collector Current:80mA; RF Transistor Case:TSFP; No. of Pins:4Pins; DC Current Gain hFE:50hFE RoHS Compliant: Yes

BFP840FESDH6327XTSA1. from Infineon

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.25V; Transition Frequency ft:85GHz; Power Dissipation Pd:75mW; DC Collector Current:35mA; RF Transistor Case:TSFP; No. of Pins:4Pins; DC Current Gain hFE:150hFE RoHS Compliant: Yes

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