STPSC20H065CT Silicon Carbide Diodes by STMicroelectronics

650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

Status: Active
Series: STPSC20H065C
RoHS: Compliant
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
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Features

No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability

Alternative Descriptions

Rectifier |Stmicroelectronics STPSC20H065CT | Newark Electronics


Frequently Asked Questions

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Additional datasheets, footprints and schematics for STPSC20H065CT are listed on our Part Details page. You can also find images and similar parts to STPSC20H065CT on this page.

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What category does STPSC20H065CT fall under?

The STPSC20H065CT is listed under Diodes and Rectifiers > Silicon Carbide Diodes.

Can I view similar or alternative parts?

You can view similar parts to STPSC20H065CT when available in the Silicon Carbide Diodes range under the specifications section at the bottom of the details page.

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Is the STPSC20H065CT RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by STMicroelectronics.

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Authorised distributors including Newark Electronics have stock available or on a lead time for STPSC20H065CT.

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