DC Collector Current | 20A |
---|---|
Collector Emitter Saturation Voltage Vce(on) | 1.55V |
Power Dissipation Pd | 115W |
Collector Emitter Voltage V(br)ceo | 650V |
Transistor Case Style | TO-263 |
No. of Pins | 3Pins |
Operating Temperature Max | 175°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
SVHC | No SVHC (17-Dec-2015) |
Igbt Single Transistor, 20 A, 1.55 V, 115 W, 650 V, To-263, 3 Rohs Compliant: Yes |Stmicroelectronics STGB10M65DF2 | Newark Electronics |
IGBT, SINGLE, 650V, 20A, TO-263-3 | element14 |
Trans IGBT Chip N-CH 650V 20A 3-Pin D2PAK T/R | Avnet America |
Where can I find additional details, specifications and documents for a STGB10M65DF2?
Additional datasheets, footprints and schematics for STGB10M65DF2 are listed on our Part Details page. You can also find images and similar parts to STGB10M65DF2 on this page.
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What category does STGB10M65DF2 fall under?
The STGB10M65DF2 is listed under Semiconductors - Discretes > Transistors > IGBT Single Transistors.
Can I view similar or alternative parts?
You can view similar parts to STGB10M65DF2 when available in the IGBT Single Transistors range under the specifications section at the bottom of the details page.
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Is the STGB10M65DF2 RoHS compliant?
This part has not been flagged as RoHS Compliant.
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