SI7997DP-T1-GE3 Part Information
|Transistor Polarity||Dual P Channel|
|Continuous Drain Current Id||-60A|
|Drain Source Voltage Vds||-30V|
|On Resistance Rds(on)||0.0045ohm|
|Rds(on) Test Voltage Vgs||-10V|
|Threshold Voltage Vgs||-2.2V|
|Power Dissipation Pd||46W|
|Transistor Case Style||PowerPAK SO|
|No. of Pins||8Pins|
|Operating Temperature Max||150°C|
|Product Range||TrenchFET Series|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (20-Jun-2016)|
Alternative Part Descriptions
- MOSFET, DUAL P CHANNEL, -30V, -60A, POWERPAK SO-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0063ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
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The SI7997DP-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the SI7997DP-T1-GE3 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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