SI7997DP-T1-GE3 Part Information

Details for SI7997DP-T1-GE3 by Vishay Intertechnology

Electronic & Electrical Components>Semiconductors - Discretes>Transistors

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Part Specifications

Transistor Polarity Dual P Channel
Continuous Drain Current Id -60A
Drain Source Voltage Vds -30V
On Resistance Rds(on) 0.0045ohm
Rds(on) Test Voltage Vgs -10V
Threshold Voltage Vgs -2.2V
Power Dissipation Pd 46W
Transistor Case Style PowerPAK SO
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range TrenchFET Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (20-Jun-2016)
RoHS Compliant

Alternative Part Descriptions

  • MOSFET, DUAL P CHANNEL, -30V, -60A, POWERPAK SO-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0063ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes | Newark Electronics

Frequently Asked Questions

Where can I find additional details, specifications and documents for a SI7997DP-T1-GE3?

Additional datasheets, footprints and schematics for SI7997DP-T1-GE3 are listed in our Part Details tab. You can also find the SI7997DP-T1-GE3 image and similar parts on this details page.

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What category does SI7997DP-T1-GE3 fall under?

The SI7997DP-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

Can I view similar or alternative parts?

You can view similar parts to SI7997DP-T1-GE3 when available in the Transistors range under the specifications section at the bottom of the details page.

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Is the SI7997DP-T1-GE3 RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Farnell.

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Authorised distributors including Newark Electronics have stock available or on a lead time for SI7997DP-T1-GE3.

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