SI1012CR-T1-GE3 Part Information
- - TrenchFETu00ae Power MOSFET: 1.2 V Rated - 100 % Rg Tested - Gate-Source ESD Protected: 1000 V
|Transistor Polarity||N Channel|
|Continuous Drain Current Id||630mA|
|Drain Source Voltage Vds||20V|
|On Resistance Rds(on)||0.33ohm|
|Rds(on) Test Voltage Vgs||4.5V|
|Threshold Voltage Vgs||400mV|
|Power Dissipation Pd||240mW|
|Transistor Case Style||SC-75A|
|No. of Pins||3Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (15-Jun-2015)|
|Operating Temperature Min||-55°C|
|Operating Temperature Range||-55°C to +150°C|
Alternative Part Descriptions
- MOSFET, N CHANNEL, 20V, 0.63A, SC-75A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.33ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
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What category does SI1012CR-T1-GE3 fall under?
The SI1012CR-T1-GE3 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the SI1012CR-T1-GE3 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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