Low Collector-Emitter Saturation Voltage |
High Self-Clamped Inductive Switching Energy |
Built in Gate-Emitter Protection Diode |
Qualified to AEC-Q101 |
Pb-free Lead Plating; RoHS Compliant |
Series | P: For ignition |
---|---|
VCES [V] | 430 |
IC[A] | 20 |
EAS(25°C) [mJ] | 250 |
EAS(150°C) [mJ] | 150 |
VCE(sat) (Typ.) [V] | 1.6 |
Pd [W] | 107 |
BVCES (Min.)[V] | 400 |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 175 |
Package Size [mm] | 6.6x10 (t=2.2) |
Common Standard | AEC-Q101 (Automotive Grade) |
Data Sheet |
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RGPZ10BM40FH Data Sheet |
Package Information |
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Package Dimensions |
Inner Structure |
Taping Information |
Explanation for Marking |
Moisture Sensitivity Level |
Anti-Whisker formation |
Condition of Soldering |
Manufacturing Data |
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Reliability Test Result |
Environmental Data |
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Constitution Materials List |
About Flammability of Materials |
Compliance of the ELV directive |
Report of SVHC under REACH Regulation |
Export Information |
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About Export Administration Regulations (EAR) |
Ignition Igbt 430V 20A To-252 Aec-Q101 | Newark Electronics |
Transistor I GBT N-CH 430V 20A 3-Pin TO-252 T/R | Avnet America |
IGNITION IGBT 430V 20A TO-252 AEC-Q101 | element14 |
Where can I find additional details, specifications and documents for a RGPZ10BM40FHTL?
Additional datasheets, footprints and schematics for RGPZ10BM40FHTL are listed on our Part Details page. You can also find images and similar parts to RGPZ10BM40FHTL on this page.
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What category does RGPZ10BM40FHTL fall under?
The RGPZ10BM40FHTL is listed under Semiconductors - Discretes > Transistors > IGBT Single Transistors.
Can I view similar or alternative parts?
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Is the RGPZ10BM40FHTL RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ROHM Semiconductor.
Which authorised distributors for RGPZ10BM40FHTL have stock available?
Authorised distributors including Chip One Stop, CoreStaff, Newark Electronics, Avnet America and element14 have stock available or on a lead time for RGPZ10BM40FHTL.
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