NCV57000DWR2G Gate Drivers by ON Semiconductor

IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation

Status: Active
Series: NCV57000
RoHS: Compliant
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NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCV57000 accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57000 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCV57000 is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

Where to Buy

Prices starting from US$1.36

Distributor Stock
Logo for RS
RS
from US$4.11
2,052
in stock
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Logo for Newark Electronics
Newark Electronics
from US$1.82
1,490
in stock
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element14
from US$3.72
1,490
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Farnell
from US$3.70
1,490
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Future Electronics
from US$1.38
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Avnet America
from US$1.36
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Avnet Asia
from US$1.43
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Richardson RFPD
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EBV Elektronik
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Avnet Silica
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Features

High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
Short Propagation Delays with Accurate Matching
DESAT with Soft Turn Off
Active Miller Clamp and Negative Gate Voltage
High Transient & Electromagnetic Immunity
5 kV Galvanic Isolation
Benefits
Improves system efficiency
Improves PWM signal integrity
Protection against overload and short circuits
Prevents spurious gate turn-on
Ruggedness in fast slew rate high voltage and high current switching applications
Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection
Applications
Automotive Power Supplies
OBC
PTC Heaters
Automobiles
End Products
HEV/EV Traction Inverters
BSG Inverters
EV Chargers
xEV/EV Automobiles

Specifications

Description NCV57000
Compliance AEC Qualified PPAP Capable Pb-free Halide free
Power Switch IGBT SiC MOSFET
Number of Outputs 1
Topology Single
Isolation Type Galvanic Isolation
Vin Max (V) 5.5
VCC Max (V) 24
Rise Time (ns) 10
Fall Time (ns) 15
Package Type SOIC-16W

Alternative Descriptions

GALVANIC ISOLATED IGBT GD | RS
Igbt Driver, -40 To 125Deg C | Newark Electronics
IGBT DRIVER, -40 TO 125DEG C | element14
Galvanic Isolated High Current IGBT Gate Driver | Future Electronics
IGBT Driver, Dual, High Side and Low Side, 7.1 A, 3.3 V to 5 V, 66 ns, 16 Pins, WSOIC | Avnet America
GATE DRIVER IC | Richardson RFPD


Frequently Asked Questions

Where can I find additional details, specifications and documents for a NCV57000DWR2G?

Additional datasheets, footprints and schematics for NCV57000DWR2G are listed on our Part Details page. You can also find images and similar parts to NCV57000DWR2G on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for NCV57000DWR2G on our Product Comparison page. Access via the 'View Pricing & Stock' button to view NCV57000DWR2G price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does NCV57000DWR2G fall under?

The NCV57000DWR2G is listed under Power Management > Gate Drivers.

Can I view similar or alternative parts?

You can view similar parts to NCV57000DWR2G when available in the Gate Drivers range under the specifications section at the bottom of the details page.

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Is the NCV57000DWR2G RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for NCV57000DWR2G have stock available?

Authorised distributors including RS, Newark Electronics, element14, Farnell and Future Electronics have stock available or on a lead time for NCV57000DWR2G.

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