MJD122G Part Information
|Collector Emitter Voltage V(br)ceo||100V|
|Transition Frequency ft||-|
|Power Dissipation Pd||1.75W|
|DC Collector Current||8A|
|DC Current Gain hFE||2500hFE|
|Transistor Case Style||TO-252|
|No. of Pins||3Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||AEC-Q101|
|MSL||MSL 1 - Unlimited|
|Av Current Ic||8A|
|Collector Emitter Saturation Voltage Vce(on)||2V|
|Continuous Collector Current Ic Max||8A|
|Current Ic Continuous a Max||8A|
|Current Ic hFE||4A|
|External Length / Height||2.55mm|
|Full Power Rating Temperature||25°C|
|Gain Bandwidth ft Min||4MHz|
|No. of Transistors||1|
|Operating Temperature Min||-65°C|
|Operating Temperature Range||-65°C to +150°C|
|Power Dissipation Ptot Max||20W|
Alternative Part Descriptions
- BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:8A; Power Dissipation Pd:1.75W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency ft:- RoHS Compliant: Yes | Newark Electronics
Frequently Asked Questions
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Additional datasheets, footprints and schematics for MJD122G are listed in our Part Details tab. You can also find the MJD122G image and similar parts on this details page.
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What category does MJD122G fall under?
The MJD122G is listed under Semiconductors - Discretes > Transistors > Bipolar Transistors.
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Is the MJD122G RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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