LMG5200MOFT Semiconductors - ICs by Texas Instruments


Status: Unknown
Series: -
RoHS: Unknown
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The LMG5200 device, an 80V, 10A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm x 8 mm x 2 mm lead free package and can be easily mounted on PCBs. The TTL logic compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring highfrequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5V).

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Driver Configuration Half Bridge
Peak Output Current 10A
Supply Voltage Min 4.75V
Supply Voltage Max 5.25V
Driver Case Style QFM
No. of Pins 9Pins
Input Delay 29.5ns
Output Delay 29.5ns
Operating Temperature Min -40°C
Operating Temperature Max 125°C
Product Range -
Automotive Qualification Standard -
RoHS Phthalates Compliant Yes
MSL MSL 3 - 168 hours
SVHC No SVHC (27-Jun-2018)

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The LMG5200MOFT is listed under Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs.

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This part has not been flagged as RoHS Compliant.

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