LMG5200MOFT Part Information
The LMG5200 device, an 80V, 10A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm x 8 mm x 2 mm lead free package and can be easily mounted on PCBs. The TTL logic compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring highfrequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5V).
- 80 V Continuous, 100 V pulsed, Voltage Rating
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Ideal for isolated and non-isolated applications up to 10MHz
- Integrated 15-mu03a9 GaN FETs and Driver
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Low Power Consumption
- Package optimized for easy PCB layout, eliminating need for underfill, creepage, and clearance requirements
- Supply Rail Undervoltage Lockout protection
- Very low common source inductance to ensure high slew rate switching without causing excessive ringing in hard-switched topologies
|Driver Configuration||Half Bridge|
|Peak Output Current||10A|
|Supply Voltage Min||4.75V|
|Supply Voltage Max||5.25V|
|Driver Case Style||QFM|
|No. of Pins||9Pins|
|Operating Temperature Min||-40°C|
|Operating Temperature Max||125°C|
|Automotive Qualification Standard||-|
|RoHS Phthalates Compliant||Yes|
|MSL||MSL 3 - 168 hours|
|SVHC||No SVHC (27-Jun-2018)|
Alternative Part Descriptions
- GAN FET DRIVER, HALF-BRIDGE, QFM-9; Driver Configuration:Half Bridge; Peak Output Current:10A; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Driver Case Style:QFM; No. of Pins:9Pins; Input Delay:29.5ns; Output Delay:29.5ns; RoHS Compliant: Yes | Newark Electronics
- 80V GaN Half Bridge Power Stage | Texas Instruments
Frequently Asked Questions
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Additional datasheets, footprints and schematics for LMG5200MOFT are listed in our Part Details tab. You can also find the LMG5200MOFT image and similar parts on this details page.
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What category does LMG5200MOFT fall under?
The LMG5200MOFT is listed under Electronic & Electrical Components > Semiconductors - ICs > Driver & Interface ICs.
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Is the LMG5200MOFT RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
Which authorised distributors for LMG5200MOFT have stock available?
Authorised distributors including Newark Electronics and Texas Instruments have stock available or on a lead time for LMG5200MOFT.
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