IRFL014TRPBF Semiconductors - Discretes by Vishay Intertechnology

MOSFET N CH 60V 0.2OHM 2.7A SOT-223

Status: Unknown
Series: -
RoHS: Unknown
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Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
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Logo for Newark Electronics Newark Electronics
187 units
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Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 2.7A
Drain Source Voltage Vds 60V
On Resistance Rds(on) 0.2ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 3.1W
Transistor Case Style SOT-223
No. of Pins 4Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
Operating Temperature Min -55°C

Alternative Descriptions

Stock Europe - ROHS:YES | ComS.I.T.
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4 | Newark Electronics
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R | Avnet Europe
N-CH 60V 2,7A 200mOhm SOT223 | Rutronik
N-Ch 60V 2,7A 3,1W 0,2R SOT223 | Schukat Electronic
MOSFET, N CH, 60V, 0.2OHM, 2.7A, SOT-223 | element14
MOSFET N-CH 60V 2.7A SOT223 | Digi-Key Electronics

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