IRF630.. Part Information
Details for IRF630.. by STMicroelectronics
Electronic & Electrical Components>Semiconductors - Discretes>Transistors
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Pricing
Break | Price |
---|---|
1 | 1.4100 |
10 | 1.2700 |
100 | 0.9900 |
500 | 0.8180 |
Stock Information
Details
Part Downloads
Part Specifications
Transistor Polarity | N Channel |
Continuous Drain Current Id | 9A |
Drain Source Voltage Vds | 200V |
On Resistance Rds(on) | 0.4ohm |
Rds(on) Test Voltage Vgs | 10V |
Threshold Voltage Vgs | 3V |
Power Dissipation Pd | 100W |
Transistor Case Style | TO-220 |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
SVHC | No SVHC (17-Dec-2015) |
Alternate Case Style | SOT-78B |
Capacitance Ciss Typ | 540pF |
Current Id Max | 9A |
Current Temperature | 25°C |
Full Power Rating Temperature | 25°C |
Lead Spacing | 2.54mm |
No. of Transistors | 1 |
On State resistance @ Vgs = 10V | 400mohm |
Operating Temperature Min | -65°C |
Operating Temperature Range | -65°C to +150°C |
Pin Configuration | a |
Pin Format | 1G (2+Tab)D 3S |
Pulse Current Idm | 36A |
Reverse Recovery Time trr Typ | 170ns |
Voltage Vds Typ | 200V |
Voltage Vgs Max | 3V |
Voltage Vgs Rds on Measurement | 10V |
Voltage Vgs th Max | 4V |
Voltage Vgs th Min | 2V |
Alternative Part Descriptions
- N CHANNEL MOSFET, 200V, 9A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; On Resistance Rds(on):0.4ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes | Newark Electronics
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The IRF630.. is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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You can view similar parts to IRF630.. when available in the Transistors range under the specifications section at the bottom of the details page.
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Is the IRF630.. RoHS compliant?
This part has not been flagged as RoHS Compliant.
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Authorised distributors including Newark Electronics have stock available or on a lead time for IRF630...
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