IPD50N06S409ATMA2 Part Information

Details for IPD50N06S409ATMA2 by Infineon Technologies

Electronic & Electrical Components > Semiconductors - Discretes > Transistors

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IPD50N06S409ATMA2

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BreakPrice
10.8470
100.7710
1000.5330
5000.4570
10000.3660
50000.3590
Stock Information
Available in stock: 0
Additional stock arrives in: weeks
Details
Manufacturer: Infineon

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Part Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 50A
Drain Source Voltage Vds 60V
On Resistance Rds(on) 0.0071ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 3V
Power Dissipation Pd 71W
Transistor Case Style TO-252
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range OptiMOS T2 Series
Automotive Qualification Standard AEC-Q100
MSL -
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • MOSFET, AEC-Q100, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes | Newark Electronics
  • Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R | Avnet America
  • IPD50N06S4 Series 60 V 9 mOhm 50 A OptiMOS«-T2 Power-Transistor-PG-TO252-3-11 | Future Electronics

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