IPB048N15N5ATMA1 Part Information

Details for IPB048N15N5ATMA1 by Infineon Technologies

Electronic & Electrical Components>Semiconductors - Discretes>Transistors

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Stock Information
Available in stock: 0
Additional stock arrives in: weeks
Manufacturer: Infineon

Part Specifications

Transistor Polarity N Channel
Continuous Drain Current Id 120A
Drain Source Voltage Vds 150V
On Resistance Rds(on) 0.0037ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 3.8V
Power Dissipation Pd 300W
Transistor Case Style TO-263
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range OptiMOS 5 Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • MOSFET, N-CH, 150V, 120A, 175DEG C, 300W; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:120A; On Resistance Rds(on):0.0037ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:3.8V RoHS Compliant: Yes | Newark Electronics
  • Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOSÔ Power Mosfet - D2PAK | Future Electronics

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The IPB048N15N5ATMA1 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.

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Is the IPB048N15N5ATMA1 RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by Farnell.

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Authorised distributors including Newark Electronics and Future Electronics have stock available or on a lead time for IPB048N15N5ATMA1.

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