IPB048N15N5ATMA1 Part Information
|Transistor Polarity||N Channel|
|Continuous Drain Current Id||120A|
|Drain Source Voltage Vds||150V|
|On Resistance Rds(on)||0.0037ohm|
|Rds(on) Test Voltage Vgs||10V|
|Threshold Voltage Vgs||3.8V|
|Power Dissipation Pd||300W|
|Transistor Case Style||TO-263|
|No. of Pins||3Pins|
|Operating Temperature Max||175°C|
|Product Range||OptiMOS 5 Series|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (27-Jun-2018)|
Alternative Part Descriptions
- MOSFET, N-CH, 150V, 120A, 175DEG C, 300W; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:120A; On Resistance Rds(on):0.0037ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:3.8V RoHS Compliant: Yes | Newark Electronics
- Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOSÔ Power Mosfet - D2PAK | Future Electronics
Frequently Asked Questions
Where can I find additional details, specifications and documents for a IPB048N15N5ATMA1?
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The IPB048N15N5ATMA1 is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the IPB048N15N5ATMA1 RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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Authorised distributors including Newark Electronics and Future Electronics have stock available or on a lead time for IPB048N15N5ATMA1.
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