Status: | Unknown |
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Series: | HGTD1N120BNS |
RoHS: | Compliant |
2.7A, 1200V at TC = 110°C |
Low saturation voltage: VCE(sat) = 2.5V @ IC = 1.0A |
Typical Fall Time...................258ns at TJ = 150°C |
Short Circuit Rating |
Low Conduction Loss |
Applications |
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Uninterruptible Power Supply |
Compliance | Pb-free |
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IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3 | element14 |
Igbt Single Transistor, 5.3 A, 2.5 V, 60 W, 1.2 Kv, To-252Aa, 3 Rohs Compliant: Yes |Onsemi HGTD1N120BNS9A | Newark Electronics |
TRANSISTOR, IGBT, 2.5V, 5.3A, TO-252AA-3 | Farnell |
Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R | Avnet America |
Where can I find additional details, specifications and documents for a HGTD1N120BNS9A?
Additional datasheets, footprints and schematics for HGTD1N120BNS9A are listed on our Part Details page. You can also find images and similar parts to HGTD1N120BNS9A on this page.
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What category does HGTD1N120BNS9A fall under?
The HGTD1N120BNS9A is listed under Discrete & Power Modules > IGBTs.
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Is the HGTD1N120BNS9A RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
Which authorised distributors for HGTD1N120BNS9A have stock available?
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