Status: | Active |
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Series: | HGT1S10N120BNS |
RoHS: | Compliant |
Prices starting from US$1.91
17A, 1200V, TC = 110°C |
Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A |
Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C |
Short Circuit Rating |
Low Conduction Loss |
Applications |
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Uninterruptible Power Supply |
Description | HGT1S10N120BNS |
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Compliance | Pb-free |
V(BR)CES Typ (V) | 1200 |
IC Max (A) | 17 |
VCE(sat) Typ (V) | 2.45 |
VF Typ (V) | - |
Eoff Typ (mJ) | 0.8 |
Eon Typ (mJ) | 0.32 |
Trr Typ (ns) | - |
Irr Typ (A) | - |
Gate Charge Typ (nC) | 100 |
Short Circuit Withstand (µs) | 8 |
EAS Typ (mJ) | 80 |
PD Max (W) | 298 |
Co-Packaged Diode | No |
Package Type | D2PAK-3 / TO-263-2 |
IGBT, Fairchild, HGT1S10N120BNST | RS |
Igbt Single Transistor, 35 A, 2.45 V, 298 W, 1.2 Kv, To-263Ab, 3 Rohs Compliant: Yes |Onsemi HGT1S10N120BNST | Newark Electronics |
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R | Avnet America |
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 | element14 |
Where can I find additional details, specifications and documents for a HGT1S10N120BNST?
Additional datasheets, footprints and schematics for HGT1S10N120BNST are listed on our Part Details page. You can also find images and similar parts to HGT1S10N120BNST on this page.
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What category does HGT1S10N120BNST fall under?
The HGT1S10N120BNST is listed under Discrete & Power Modules > IGBTs.
Can I view similar or alternative parts?
You can view similar parts to HGT1S10N120BNST when available in the IGBTs range under the specifications section at the bottom of the details page.
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Is the HGT1S10N120BNST RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.
Which authorised distributors for HGT1S10N120BNST have stock available?
Authorised distributors including RS, Newark Electronics, Avnet America, element14 and Farnell have stock available or on a lead time for HGT1S10N120BNST.
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