FDN337N MOSFETs by ON Semiconductor

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

Status: Active
Series: FDN337N
RoHS: Compliant
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SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Prices starting from US$0.07


Distributor Starting From Stock
Logo for element14 element14 US$0.27
37,712
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Logo for Newark Electronics Newark Electronics US$0.20
17,237
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Logo for Farnell Farnell US$0.26
17,237
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Logo for Transfer Multisort Elektronik Transfer Multisort Elektronik US$0.19
70
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Logo for RS RS US$0.16
-
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Logo for Avnet America Avnet America US$0.15
-
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Logo for Avnet Asia Avnet Asia US$0.14
-
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Logo for Distrelec Distrelec US$0.25
-
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Logo for EBV Elektronik EBV Elektronik -
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Features

2.2 A, 30 V  RDS(ON) = 0.065 Ω @ VGS = 4.5 V  RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Applications
This product is general usage and suitable for many different applications.

Specifications

Description FDN337N
Compliance Pb-free Halide free
Channel Polarity N-Channel
Configuration Single
V(BR)DSS Min (V) 30
VGS Max (V) 8
VGS(th) Max (V) 1
ID Max (A) 2.2
PD Max (W) 0.5
RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) 92
RDS(on) Max @ VGS = 10 V (mΩ) 65
Qg Typ @ VGS = 4.5 V (nC) 7
Qg Typ @ VGS = 10 V (nC) 7
Ciss Typ (pF) 300
Package Type SOT-23-3

Alternative Descriptions

N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3 | Future Electronics
MOSFET, N, 30V, 2.2A, SOT-23 | element14
Mosfet Transistor, N Channel, 2.2 A, 30 V, 65 Mohm, 4.5 V, 700 Mv Rohs Compliant: Yes |Onsemi FDN337N | Newark Electronics
Transistor: N-MOSFET | Transfer Multisort Elektronik
MOSFET N-Channel 30V 2.2A SuperSOT3 | RS
Trans MOSFET N-CH 30V 2.2A 3-Pin SuperSOT T/R | Avnet America


Frequently Asked Questions

Where can I find additional details, specifications and documents for a FDN337N?

Additional datasheets, footprints and schematics for FDN337N are listed on our Part Details page. You can also find images and similar parts to FDN337N on this page.

What pricing and inventory information can I view?

Distributor pricing and stock information is available for FDN337N on our Product Comparison page. Access via the 'View Pricing & Stock' button to view FDN337N price breaks, MOQs, lead times, inventory and SKUs from distributors.

What category does FDN337N fall under?

The FDN337N is listed under Discrete & Power Modules > MOSFETs.

Can I view similar or alternative parts?

You can view similar parts to FDN337N when available in the MOSFETs range under the specifications section at the bottom of the details page.

Who can I contact for technical support of the product?

Submit any questions directly to the customer support team of the distributor listing the product. For the FDN337N you can contact the distributor directly for product support, shipping queries etc.

Is the FDN337N RoHS compliant?

Yes. This part has been flagged as RoHS Compliant by ON Semiconductor.

Which authorised distributors for FDN337N have stock available?

Authorised distributors including Future Electronics, element14, Newark Electronics, Farnell and Transfer Multisort Elektronik have stock available or on a lead time for FDN337N.

How do I check stock and lead times for all distributors?

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