DN2535N3-G Part Information

Details for DN2535N3-G by Microchip Technology


Part Description

DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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Part Features

  • High input impedance
  • Low input capacitance
  • Fast switching speeds
  • Low on-resistance
  • Free from secondary breakdown
  • Low input and output leakage

Part Specifications

BVdsx min (V) 350
RDS (Ohms) 25
Vgs(off) min (V) -1.5
Vgs(off) max (V) -3.5
Package TO-92, TO-220
Temperature Range -55C to +150C

Alternative Part Descriptions

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  • Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 Bag | Avnet America
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  • Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 Bag | Avnet Europe
  • MOSFET [Microchip] DN2535N3-G MOSFET | Distrelec
  • DN2535 Series 350 V 120 mA N-Channel Depletion-Mode Vertical DMOS FETs - TO-92-3 | Future Electronics

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