DMN63D8LDW-7 Part Information

Details for DMN63D8LDW-7 by Diodes Incorporated

Electronic & Electrical Components > Semiconductors - Discretes > Transistors

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DMN63D8LDW7

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Pricing
BreakPrice
30000.0519
90000.0434
150000.0430
600000.0418
900000.0415
Stock Information
Available in stock: 39000
Additional stock arrives in: 32 weeks
Details
Manufacturer: DIODES INCORPORATED

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Part Specifications

Transistor Polarity Dual N Channel
Continuous Drain Current Id 260mA
Drain Source Voltage Vds 30V
On Resistance Rds(on) 2.8ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 1.5V
Power Dissipation Pd 400mW
Transistor Case Style SOT-363
No. of Pins 6Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard AEC-Q101
MSL MSL 1 - Unlimited
SVHC No SVHC (15-Jan-2019)
RoHS Compliant

Alternative Part Descriptions

  • Dual N-Ch Enhancement MOSFET SOT-363 | RS Components
  • MOSFET BVDSS: 41V~60V SOT363 T&R 3K ROHS COMPLIANT: YES | Newark Electronics
  • Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363 | Future Electronics EMEA
  • Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R | Avnet America
  • Dual N-Ch Enhancement MOSFET SOT-363 | Allied Electronics & Automation
  • Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R | Avnet Europe
  • Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R | Avnet Asia
  • Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363 | Future Electronics
  • Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363 | Future Electronics APAC
  • N+N CH MOS+ESD 30V 0,22A SOT363 | Rutronik

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