CSD87335Q3DT Part Information

Details for CSD87335Q3DT by Texas Instruments

Electronic & Electrical Components > Semiconductors - Discretes > Transistors

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Part Features

  • 93.5% System Efficiency at 15 A
  • Half-Bridge Power Block
  • Halogen Free
  • High-Density SON 3.3 mm u00d7 3.3 mm Footprint
  • High-Frequency Operation (Up To 1.5 MHz)
  • Low Switching Losses
  • Optimized for 5-V Gate Drive
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Ultralow Inductance Package
  • Up to 25-A Operation
  • Up to 27-V VIN

Part Specifications

Transistor Polarity Dual N Channel
Continuous Drain Current Id -
Drain Source Voltage Vds 30V
On Resistance Rds(on) 0.0067ohm
Rds(on) Test Voltage Vgs 4.5V
Threshold Voltage Vgs 750mV
Power Dissipation Pd 6W
Operating Temperature Max 150°C
Product Range -
SVHC No SVHC (27-Jun-2018)
No. of Pins 8Pins
Transistor Case Style LSON

Alternative Part Descriptions

  • MOSFET, DUAL N-CH, 30V, LSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:750mV RoHS Compliant: Yes | Newark Electronics
  • 30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 25 A | Texas Instruments

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