CSD87334Q3DT Part Information
- 1.6 W PLoss at 12 A
- 96.1% System Efficiency at 12 A
- Half-Bridge Power Block
- High Density u2013 SON 3.3 mm u00d7 3.3 mm Footprint
- High-Frequency Operation (Up to 1.5 MHz)
- Low Switching Losses
- Optimized for 5-V Gate Drive
- Optimized for High Duty Cycle
- Pb-Free Terminal Plating
- RoHS Compliant
- Ultra-Low Inductance Package
- Up to 20 A operation
- Up to 24 Vin
|Transistor Polarity||Dual N Channel|
|Continuous Drain Current Id||-|
|Drain Source Voltage Vds||30V|
|On Resistance Rds(on)||0.0049ohm|
|Rds(on) Test Voltage Vgs||8V|
|Threshold Voltage Vgs||900mV|
|Power Dissipation Pd||6W|
|Transistor Case Style||VSON|
|No. of Pins||8Pins|
|Operating Temperature Max||150°C|
|Automotive Qualification Standard||-|
|MSL||MSL 1 - Unlimited|
|SVHC||No SVHC (27-Jun-2018)|
Alternative Part Descriptions
- 30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A | Texas Instruments
Frequently Asked Questions
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The CSD87334Q3DT is listed under Electronic & Electrical Components > Semiconductors - Discretes > Transistors.
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Is the CSD87334Q3DT RoHS compliant?
Yes. This part has been flagged as RoHS Compliant by Farnell.
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