Transistor Polarity | P Channel |
---|---|
Continuous Drain Current Id | -2.5A |
Drain Source Voltage Vds | -20V |
On Resistance Rds(on) | 0.075ohm |
Rds(on) Test Voltage Vgs | -8V |
Threshold Voltage Vgs | -950mV |
Power Dissipation Pd | 500mW |
Transistor Case Style | LGA |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (27-Jun-2018) |
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection | Texas Instruments |
Mosfet, P-Channel, -20V, -2.5A, Lga-3 | Newark Electronics |
MOSFET, P-CHANNEL, -20V, -2.5A, LGA-3 | element14 |
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