CSD23285F5T Part Information

Details for CSD23285F5T by Texas Instruments

Electronic & Electrical Components > Semiconductors - Discretes > Transistors

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Part Specifications

Transistor Polarity P Channel
Continuous Drain Current Id -5.4A
Drain Source Voltage Vds -12V
On Resistance Rds(on) 0.029ohm
Rds(on) Test Voltage Vgs -4.5V
Threshold Voltage Vgs -650mV
Power Dissipation Pd 1.4W
Transistor Case Style PICOSTAR
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range FemtoFET Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (27-Jun-2018)
RoHS Compliant

Alternative Part Descriptions

  • MOSFET, P-CH, -12V, -5.4A, PICOSTAR; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; PowerRoHS Compliant: Yes | Newark Electronics
  • -12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection | Texas Instruments

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